The invention discloses a cavity film bulk acoustic resonator and a preparation method thereof, belonging to the technical field of acoustic resonators The preparation method comprises the steps of growing a film structure layer in the acoustic resonator on a preparation substrate; fixing both the preparation substrate and the film structure layer growing on the preparation substrate on a support substrate through one side of the film structure layer so as to form a cavity between the support substrate and the film structure layer; and stripping the film structure layer off the preparation substrate The film structure layer comprises a support layer, or comprises a support layer and a bottom electrode, or comprises a support layer, a bottom electrode and a piezoelectric film, or comprises a support layer, a bottom electrode, a piezoelectric film and a top electrode, so as to form a structure comprising the support substrate, the support layer, the bottom electrode, the piezoelectric film and the top electrode that are sequentially overlaid Bad effects on a resonance structure in removing of a sacrificial layer in the conventional process are eliminated, so that the cavity film bulk acoustic resonator prepared by the method has better performances

Cavity film bulk acoustic resonator and preparation method thereof

The invention relates to a hollow cavity-type film bulk acoustic resonator and a production method for the same. The acoustic resonator comprises a silicon substrate, a sacrificial layer and a piezoelectric thin film transducer stacking structure, wherein the piezoelectric thin film transducer stacking structure sequentially comprises a support layer, a bottom electrode, a piezoelectric layer and a top electrode from bottom to top; a release window array penetrates through the piezoelectric thin film transducer stacking structure, and forms a release channel; a hollow portion is arranged at the middle of the sacrificial layer, and forms an air cavity with the lower silicon substrate and the upper support layer; the air cavity is formed by releasing the sacrificial layer located on the front surface of the silicon substrate, and the release channel is composed of the release window array penetrating through the piezoelectric thin film transducer stacking structure. According to the functions and structure characteristics of an FBAR air gap, the production method disclosed by the invention is beneficial to improve the manufacturability, and capable of rapidly and cleanly forming the cavity, and reducing the dimensions of a chip.

Hollow cavity-type film bulk acoustic resonator and production method for same

The invention discloses an FBAR with a temperature compensation function and a resonance frequency tuning function and a filter. The FBAR comprises a substrate, a temperature compensation and resonance frequency tuning layer, a supporting layer, a bottom electrode, a top electrode and a piezoelectric film. The middle of the bottom of the temperature compensation and resonance frequency tuning layer is provided with a groove, the substrate is arranged under the two sides of the groove, and a cavity is formed through the substrate and the bottom face of the temperature compensation and resonance frequency tuning layer; the supporting layer is arranged on the upper side of the temperature compensation and resonance frequency tuning layer; the piezoelectric film is arranged between the bottom electrode and the top electrode; the FBAR and the filter can effectively reduce temperature and frequency drift caused by a piezoelectric film with a negative temperature coefficient, and accordingly the temperature stability of the FBAR is improved. In the post-processing technology, the thickness of an FBAR lamination is adjusted by controlling etching time of the temperature compensation and resonance frequency tuning layer in the FBAR lamination, frequency drift caused by process errors can be effectively reduced, and the frequency accuracy of the FBAR is improved.

FBAR with temperature compensation function and resonance frequency tuning function and filter

The invention discloses an SAW-MEMS (surface acoustic waves-micro electro mechanical system) acceleration sensor which relates to the field of microelectronic inertial components. The acceleration sensor comprises an SAW metal interdigital transducer, a quartz plate and a silicon substrate, wherein the quartz plate is provided with a micro cantilever, and the silicon substrate is provided with a preset groove; the SAW metal interdigital transducer is manufactured on the micro cantilever in the quartz plate; the micro cantilever is bonded on the silicon substrate provided with the preset groove; the quartz plate is thinned through bonding with another silicon substrate without groove firstly, then transferred to the silicon substrate provided with the preset groove by using a bonding process; the SAW metal interdigital transducer is manufactured on the part, corresponding to the preset groove, of the quartz plate; and the micro cantilever structure is etched on the quartz plate, so that the SAW metal interdigital transducer is arranged on the micro cantilever. Because the acceleration sensor disclosed by the invention is prepared by using an MEMS process, the acceleration sensor is small in component size and suitable for mass production, therefore, the acceleration sensor provided by the invention is high in reliability, large in sensitive range, low in power consumption, high in precision, small in size and easy to package.

SAW-MEMS (surface acoustic waves-micro electro mechanical system) acceleration sensor and manufacturing method thereof

A fluidic device incorporating a substrate, at least one bulk acoustic wave (BAW) resonator structure, and a fluidic channel bound at least in part by the at least one BAW resonator structure. The fluidic device further includes at least one fluidic via defined through at least a portion of the substrate, thereby permitting fluidic connections and electrical connections to be provided on opposing upper and lower surfaces of the fluidic device. The at least one BAW resonator structure may include a piezoelectric material comprising a c-axis having an orientation distribution that is predominantly non-parallel to normal of a face of the substrate, and may be overlaid with a functionalization material (e.g., a specific binding material overlying a self-assembled monolayer) to enable detection of a target species in a sample supplied to the fluidic device.

Sensor device with BAW resonator and through-substrate fluidic vias

The invention relates to a cavity-type film bulk acoustic resonator (FBAR), consisting of a silicon on insulator (SOI) substrate with a cavity and a piezoelectric thin film transducer arranged on the substrate. The FBAR is characterized in that the surface of the substratum silicon slice in the SOI substrate with the cavity is provided with a groove, substratum silicon slice and top-layer silicon are bonded to form a closed cavity structure; the upper of the top-layer silicon is provided with a transducer which is composed of a piezoelectric thin film and thin electrodes plated on the upper surface and the lower surface of the piezoelectric thin film; and a resonator can be tuned, and the thickness of the top-layer silicon can be regulated through controlling the etching time of the top-layer silicon on the upper of the cavity, thus the resonant frequency of the resonator can be regulated. As the preset cavity structure is used, in the invention, no sacrificial layer is needed, thus the chemical mechanical polishing process and the sacrificial layer release process in aboard patents and products, which are used for treating the sacrificial layer are not required; and meanwhile, in the invention, the advantages of small source parasitic capacitance, small drain parasitic capacitance, low voltage, low power consumption and the like of an SOI material are integrated, therefore, the FBAR can be compatible with an integrated circuit (IC), is easy to integrate, has simple process and is applicable to mass production.

Manufacturing method of cavity-type film bulk acoustic resonator (FBAR)

The invention discloses a preset cavity type SOI (silicon on insulator) substrate film bulk acoustic wave resonator and a manufacturing method thereof, relating to the field of electronic devices. The acoustic wave resonator comprises a cavity SOI substrate and a piezoelectric film transducer arranged on the cavity SOI substrate, wherein the resonator comprises a piezoelectric film, a base electrode and a top electrode; the electrodes of the resonator are approximate to oval; a groove is arranged on the surface of a substrate silicon wafer in the cavity SOI substrate; and a closed cavity structure is formed by a top silicon and the substrate silicon wafer after bonding. Since a preset cavity structure is adopted, no sacrifice layer is used in the resonator and a chemical mechanical polishing process and a sacrifice layer releasing process for treating the sacrifice layers in foreign patents and products are unnecessary. Moreover, the preset cavity type SOI substrate film bulk acoustic wave resonator combines the advantages of SOI material, such as small source and drain parasitic capacitances, low voltage, low power consumption and the like. The resonator provided by the invention is compatible with an IC (integrated circuit), is easily integrated, is manufactured with simple process and is suitable for batch production.

Preset cavity type SOI (silicon on insulator) substrate film bulk acoustic wave resonator and manufacturing method thereof

The utility model discloses an SAW-MEMES (surface acoustic wave micro-electromechanical system) acceleration sensor and relates to the field of micro-electronic inertia devices. The SAW-MEMES acceleration sensor comprises an SAW metal interdigital transducer, a quartz plate with a micro-cantilever beam and a silicon substrate preinstalled with a groove, the SAW metal interdigital transducer is arranged on the micro-cantilever beam in the quartz chip, the micro-cantilever beam is bonded onto the silicon substrate preinstalled with the groove, the quartz chip is transferred onto the silicon substrate preinstalled with the groove by the bonding technology after being bonded with another silicon substrate without a groove and being thinned, an SAW interdigital transducer is arranged at a position on the quartz chip corresponding to the preinstalled groove, and a micro-cantilever beam structure is carved on the quartz chip, so that the SAW interdigital transducer can be arranged on the micro-cantilever beam. The SAW-MEMES acceleration sensor adopts the MEMES technology, is suitable for batch production and has small-sized device. Accordingly, the acceleration sensor is high in reliability, wide in sensitive range, low in power consumption, high in accuracy, small in size and easy to be packed.

SAW-MEMES (surface acoustic wave micro-electromechanical system) acceleration sensor

The invention discloses a tunable preset cavity type silicon on insulator (SOI) substrate film body acoustic resonator and a manufacturing method thereof, and relates to a frequency tunable resonator and the manufacturing method thereof The tunable preset cavity type SOI substrate film body acoustic resonator comprises an SOI substrate with a cavity and a piezoelectric thin film transducer arranged on the substrate; the resonator comprises a piezoelectric film, a bottom electrode and a top electrode; one side of the bottom electrode close to the preset cavity is provided with an SOI tuning layer, and the thickness of the SOI tuning layer is controlled by controlling corrosion time; the surface of a substrate silicon chip in the SOI substrate with the cavity is provided with a groove; andthe substrate silicon chip and a top layer silicon form a closed cavity structure after being bonded As the preset cavity structure is adopted, the tunable preset cavity type SOI substrate film bodyacoustic resonator has no sacrificial layer, so a chemically mechanical polishing technology and a sacrificial layer releasing technology which are adopted when the sacrificial layer is processed in a foreign patent and a product thereof are not required; meanwhile, the tunable preset cavity type SOI substrate film body acoustic resonator integrates the advantages of small source and drain parasitic capacitance and lower voltage, low power consumption and the like of the SOI material The tunable preset cavity type SOI substrate film body acoustic resonator can be compatible with an integrated circuit (IC), and is easy to integrate, simple in technology and suitable for mass production

Junlin Leng

Papers

Manufacturing method of cavity-type film bulk acoustic resonator (FBAR)

Preset cavity type SOI (silicon on insulator) substrate film bulk acoustic wave resonator and manufacturing method thereof

SAW-MEMS (surface acoustic waves-micro electro mechanical system) acceleration sensor and manufacturing method thereof

SAW-MEMES (surface acoustic wave micro-electromechanical system) acceleration sensor

Tunable preset cavity type silicon on insulator (SOI) substrate film body acoustic resonator and manufacturing method thereof