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Jingfu Bao

Researcher at University of Electronic Science and Technology of China

Publications -  121
Citations -  1012

Jingfu Bao is an academic researcher from University of Electronic Science and Technology of China. The author has contributed to research in topics: Resonator & Insertion loss. The author has an hindex of 11, co-authored 97 publications receiving 600 citations.

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A rotating friction power generation device for outputting a unidirectional current

TL;DR: In this paper, a rotary friction power generation device for outputting a unidirectional current, comprising at least one power generation unit, was presented, where each of the first and second ends of the second sub-friction body is provided with a conductive member, wherein N is a positive integer greater than or equal to 1.
Proceedings ArticleDOI

Quality Enhancement of Centered Hole Thin Film Disc Resonator by Drilled Phononic crystals

TL;DR: In this paper, a silicon-based phononic crystal with drilling across its two sides is proposed to control the acoustic waves and a very large band gap is obtained by one dimensional 1D and two dimensional 2D drilled phononic crystals in desired frequency ranges.
Journal ArticleDOI

Analysis of high electromechanical coupling coefficient zinc oxide Lame’ mode resonators and a design technique for spurious mode mitigation

TL;DR: In this article , a comprehensive analysis on zinc oxide (ZnO) based modified Lame' mode resonator with high electromechanical coupling coefficient (k e f f 2 ) is presented.
Proceedings ArticleDOI

Comparative Study of Traditional and Broadband Piston Mode Designs of A1-Mode Resonators on Lithium Niobate

TL;DR: In this article, a comparative study of traditional and broadband piston mode (BPM) designs applied to A 1 -mode resonators on lithium niobate was performed, and the results indicated that BPM design was superior to the traditional one.
Proceedings ArticleDOI

Modeling and analysis of distributed MEMS phase shifter with metal-air-metal capacitor

TL;DR: In this article, an equivalent circuit model of MAM (metal-air-metal) capacitor applied in RF MEMS devices is proposed and the parametric analysis of the proposed models and the designing method are also presented.