A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.

Lithographic apparatus, and device manufacturing method

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a single film forming chamber with the above film formation condition, crystallization is not sufficiently attained in a crystallization process. By forming the amorphous silicon film using silane gas diluted with hydrogen, crystallization is sufficiently attained in the crystallization process even with the continuous formation of the base film through the amorphous silicon film in the single film forming chamber.

Method of Manufacturing a Semiconductor Device

An injection seeded modular gas discharge laser system (2) capable of producing high quality pulsed beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator (10) producing a very narrow band seed beam, which is amplified (12) in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in the ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan (10A) providing sufficient gas flow to permit operation at pulse rates of 4,000 Hz or greater by cleaning debris from the discharge region in less time that the approximately 0.25 milliseconds between pulses. The masters oscillation is equipped with a line narrowing package having a very fast tuning mirror capable of controlling centerline wavelength on a pulse-to-pulse basis at repetition rates of 4000 Hz or greater to a precision of less than 0.2 pm.

Very narrow band, two chamber, high rep rate gas discharge laser system

A liquid crystal display (LCD) exhibiting enhanced optical viewing performance. In a preferred embodiment, the LCD comprises a liquid crystal display panel, the liquid crystal display panel comprising a pair of transparent substrates, liquid crystal material sandwiched between the transparent substrates and transparent electrodes positioned between the liquid crystal material and the transparent substrates. The LCD also comprises a rear polarizer assembly comprising a compensation film, a polarizer mounted on the rear surface of the compensation film, and a first index-matched, pressure sensitive adhesive (PSA) mounted on the front surface of the compensation film, the PSA being adhered to the rear surface of the LCD panel. The LCD also comprises a front polarizer assembly, the front polarizer assembly comprising a front polarizer, a compensation film mounted on the rear surface of the front polarizer and an index-matched PSA mounted on the front surface of the front polarizer. The front polarizer is crossed relative to the rear polarizer. The front polarizer assembly may be adhered to the front of the LCD panel with a second index-matched, optical bonding material or may be spaced therefrom by an air gap. A transparent cover is mounted on the second index-matched PSA. The transparent cover is preferably a plastic plate. The plastic plate may be textured to reduce glare or may have an anti-reflection coating or an anti-reflection film applied to the front surface thereof. Instead of a plastic plate, the transparent cover may be a glass plate or a touch panel.

Super bright low reflectance liquid crystal display

PROBLEM TO BE SOLVED: To provide a laser light source which can be operated at room temperature and is capable of efficiently generate deep ultraviolet rays and to provide a mask inspection device and an exposure device which have a high defect detection sensitivity due to this deep ultraviolet laser light source and are small-sized and stable SOLUTION: The deep ultraviolet light source includes; a solid laser which emits laser light having a wavelength of 090 to 092μm; a fourth higher harmonic generation part which generates the fourth higher harmonic of the laser light having the wavelength of 090 to 092μm, which is taken out from the solid laser; and a sum frequency generation part which generates light having a sum frequency of the fourth higher harmonic generated by the fourth higher harmonic generation part and laser light having a wavelength of 13μm COPYRIGHT: (C)2007,JPO&INPIT

Deep ultraviolet light source, mask inspection device using same, and exposure device

PROBLEM TO BE SOLVED: To provide a scanning exposure system of the structure that a wafer can be accurately, easily aligned, and a gas is hardly introduced between a lens and the wafer. SOLUTION: A lower side surface of a convex lens 200 of a reduction projection optical system 3 becomes parallel to the wafer 4 and flat only at a central part (a width of about 10 mm) and its left and right become oblique surfaces when a cross section is taken in a predetermined direction. Meanwhile, when the cross section is taken in a direction crossing the predetermined direction, the lower side surface of the convex lens 200 becomes flat in the entirety. When a liquid immersion optical system is applied to the scanning exposure system of this convex lens, the structure that the wafer can be accurately aligned and the gas is hardly introduced between the lens and the wafer is obtained in the scanning exposure system. COPYRIGHT: (C)2005,JPO&NCIPI

Scanning exposure system and method for exposure

PROBLEM TO BE SOLVED: To suppress speckle noise in a light source by wavelength conversion, by arranging a translucent member in the light path between a laser beam generation means and an ArF excimer laser, and varying the seed light within the translucent member within its beam face. SOLUTION: An exposure light source 1 includes a seed light oscillator 3, an ArF excimer laser 4, and an optical system which leads a seed light to the ArF excimer laser 4. A translucent member 7 is stepwise, and the seed light L3 entering this enters the left face of the translucent member 7 vertically. The face where the seed beam L4 comes out in the translucent member 7 is a stepped face, so it comes out of the face on each stair of plural stairs, too. Accordingly, the outgoing seed light L4 is parallel with the seed light L3 without being refracted. But, the distance of the advance within the translucent member 7 varies with the positions within the cross section of the beam, so the phase of the outgoing seed light L4 varies with each stair.

Semiconductor manufacturing device, and manufacture of semiconductor device

PROBLEM TO BE SOLVED: To provide a wavelength conversion device for supplying continuous deep ultraviolet laser beams having sufficient power usable for an inspection light source of a mask or the like. SOLUTION: The wavelength conversion device 10 comprises a first light source 11 for generating light of first wavelength; a second light source 12 for generating light of second wavelength shorter than the first wavelength; a resonator 13 for resonating the light of first wavelength; a first wavelength conversion crystal 14 arranged in the resonator 13; and a second wavelength conversion crystal 15 arranged adjoining the emission side of the first wavelength conversion crystal 14. The emission plane of the first wavelength conversion crystal 14 and the incidence plane of the second wavelength conversion crystal 15 are arranged to face so as to be parallel with each other. The first wavelength conversion crystal 14 generates light of third wavelength by the generation of total frequency of the first wavelength light resonated by the resonator 13 and the second wavelength light, and the second wavelength conversion crystal 15 generates continuous waves of fourth wavelength by the generation of total frequency of the first wavelength light resonated by the resonator 13 and the third wavelength light. COPYRIGHT: (C)2009,JPO&INPIT

Wavelength conversion device, inspection device, and wavelength conversion method

PURPOSE:To accurately mark an optional graphic to a material to be irradiated moving at a high speed on a belt by bringing a position signal, an oscillation signal and an inclination signal into hand shake control. CONSTITUTION:When a sample 110 crosses the front of a sensor 114, a sensor signal 115 is latched at a high level and a central processing unit issues a reset signal 118 of an acceptance position encoder 116. The encoder 116 returns position pulse signals 117 whenever it moves a fixed length irrespective of the moving time of a sample bench 111 and the device 112 compares this with the contents of a procedure marking graphic storing unit 113. When said signal arrives at a set number of pulses, it outputs parallel signals 441-443, is changed by actuation mirror driving device 51-53 into actuation mirror signals 41-43 and only when the actuation mirror 1-3 receives these signals, it calibrates optical axis so that the reflected light penetrates through a slit 108. When the central processing unit 112 receives the following position pulse signals, a transmitting signal is outputted and transmitted to a short pulse laser beam oscillation 101 to obtain laser pulses.

究武久

Papers

Deep ultraviolet light source, mask inspection device using same, and exposure device

Scanning exposure system and method for exposure

Semiconductor manufacturing device, and manufacture of semiconductor device

Wavelength conversion device, inspection device, and wavelength conversion method

Laser beam marker

究 武久

Papers

Deep ultraviolet light source, mask inspection device using same, and exposure device

Scanning exposure system and method for exposure

Semiconductor manufacturing device, and manufacture of semiconductor device

Wavelength conversion device, inspection device, and wavelength conversion method

Laser beam marker

究武久