Showing papers by "Joachim Heberlein published in 1991"
TL;DR: In this paper, a triple torch plasma reactor was used to generate a convergent plasma volume to entrain the participating gases, and three coalescing plasma jets produced by this reactor direct the dissociated and ionized gaseous species onto (100) silicon wafer substrates where the diamond grows.
Abstract: Diamond crystals and films have been success full y synthesized by DC thermal plasma jet CVD at a pressure of I atrn. A novel triple torch plasma reactor has been used to generate a convergent plasma volume to entrain the participating gases. Three coalescing plasma jets produces! by this reactor direct the dissociated and ionized gaseous species onto ( 100) silicon wafer substrates where the diamond grows. In a typical 10-min run, depending on the method of .substrate preparation, either microcrystals with sizes up to 8 μm or continuous films with thicknesses of 1–2 μm have been obtained. X-ray diffraction, scanning electron microscopy, and Raman spectroscopy have been used for the characterization of the crystals and of the films.
28 citations
TL;DR: In this article, the orientation and distribution of SiC at the interface between the diamond and silicon substrate have been observed using selected-area electron diffraction with the associated dark-field images.
Abstract: Diamond films have been successfully deposited by DC thermal plasma jet CVD at a rate of 40 {mu}m/h under atmospheric and subatmospheric pressures. Transmission electron microscopy (TEM) has been used for the characterization of the diamond films and the intermediate phase. The orientation and the distribution of {beta}--SiC at the interface between the diamond and silicon substrate have been observed using selected-area electron diffraction with the associated dark-field images. X-ray diffraction, scanning electron microscopy, and Raman spectroscopy are used for the characterization of the produced diamond films. Potential applications of selected-area channeling patterns are discussed for investigating the correlations between the growth direction and the crystalline perfection.
26 citations
Patent•
29 Nov 1991TL;DR: In this paper, a method for preparing a diamond coating on a substrate is described, which includes a first step of applying a partial diamond coating having an effective amount of void area therein to the work surface of a substrate.
Abstract: A method is provided for preparing a diamond coating on a substrate. The method includes a first step of applying a partial diamond coating having an effective amount of void area therein to the work surface of a substrate. In a follow-up step the void area in the partial coating is filled with binder, preferably metallic binder. In a later step, diamond projecting outwardly from the binder is further grown, to generate a covering portion or a head portion extending over, and in protective relationship with, the binder or binder material. According to the present invention preferred products are also provided.
12 citations
TL;DR: In this article, a three-step process for producing a composite diamond film is presented, in which a diamond is reinforced by an electroplated metal binder and the diamond is regrown to produce a continuous, strongly adhered diamond film on molybdenum and tungsten substrates.
Abstract: A three-step process for producing a composite diamond film is presented. Plasma deposited diamonds are reinforced by an electroplated metal binder and the diamonds regrown to produce a continuous, strongly adhered diamond film on molybdenum and tungsten substrates. Microscratching and pin-on-disk testing indicate that the composite films are more adherent than plasma deposited diamonds alone.
1 citations