A sports electronic training system with electronic gaming features, and applications thereof, are disclosed. In an embodiment, the system comprises at least one monitor and a portable electronic processing device for receiving data from the at least one monitor and providing feedback to an individual based on the received data. The monitor can be a motion monitor that measures an individual's performance such as, for example, speed, pace and distance for a runner. Other monitors might include a heart rate monitor, a temperature monitor, an altimeter, et cetera. In an embodiment, an input is provided to an electronic game based on data obtained from the at least one monitor that effects, for example, an avatar, a digitally created character, an action within the game, or a game score of the electronic game.

Sports electronic training system with electronic gaming features, and applications thereof

A sports electronic training system, and applications thereof, are disclosed. In an embodiment, the system comprises at least one monitor and an electronic processing device for receiving data from the at least one monitor and providing feedback to an individual based on the received data. The monitor can be a motion monitor that measures an individual's performance such as, for example, speed, pace and distance for a runner.

Sports Electronic Training System, and Applications Thereof

A sports electronic training system with sport ball, and applications thereof, are disclosed. In an embodiment, the system comprises at least one monitor and an electronic processing device for receiving data from the at least one monitor and providing feedback to an individual based on the received data. The monitor can be a motion monitor that measures an individual's performance such as, for example, speed, pace and distance for a runner. Other monitors might include a heart rate monitor, a temperature monitor, an altimeter, et cetera. In an embodiment, a sport ball that includes a motion monitor for monitoring motion of the sport ball stores an identification value received when a shoe that includes a motion monitor contacts the sport ball. The stored identification value serves as a record of the contact.

Sports electronic training system with sport ball, and applications thereof

Characterization of semiconductor interfaces by second-harmonic generation

2066193 9105366 PCTABS00004 A process for fabricating thin film silicon wafers using a novel etch stop composed of a silicon-germanium alloy (24) includes properly doping a prime silicon wafer (20) for the desired application, growing a strained Si1-x Gex alloy layer (24) onto seed wafer (20) to serve as an etch stop, growing a silicon layer (26) on the strained alloy layer with a desired thickness to form the active device region, oxidizing the prime wafer (20) and a test wafer (30), bonding the oxide surfaces of the test (30) and prime wafers (20), machining the backside of the prime wafer (20) and selectively etching the same to remove the silicon (20 and 22) removing the strained alloy layer (24) by a non-selective etch, thereby leaving the device region silicon layer (26). In an alternate embodiment, the process includes implanting germanium, tin, or lead ions to form the strained etch stop layer (24).

Method of producing a thin silicon-on-insulator layer

1. Fundamentals.- 1.1 Silicon as the Base Material for MMICs.- 1.2 Linear Passive Planar Millimeter Wave Circuits on Silicon.- 1.2.1 Wave Propagation in Planar Structures.- 1.2.2 Planar Transmission Lines.- 1.2.3 Planar Transmission-Line Discontinuities.- 1.2.4 Planar Resonators.- 1.3 Planar Millimeter-Wave Antennas on Silicon.- 1.3.1 Antenna Elements.- 1.3.1 Antenna Arrays.- 1.4 Planar Millimeter-Wave Circuits Containing Active and Nonlinear Elements.- 1.5 Appendix: Closed-Form Expressions for Transmission-Line Characteristics.- References.- 2. Transit-Time Devices.- 2.1 Principles of Transit-Time-Induced Negative Resistance.- 2.2 Injection Mechanisms.- 2.2.1 Impact Ionisation - IMPATT Diode.- 2.2.2 Thermionic Emission - BARITT Diode.- 2.2.3 Tunnel Injection.- 2.2.4 The Misawa Mode.- 2.3 Numerical Large-Signal Simulations.- 2.4 Skin Effect.- 2.5 Thermal Properties.- 2.5.1 Integrated Transit-Time Devices.- 2.5.2 Diamond Heat Sinks.- 2.5.3 Ring Diodes.- 2.5.4 Transient Thermal Resistance.- 2.5.5 Measurement of the Thermal Resistance.- 2.6 Design Constraints.- 2.7 Technology.- 2.7.1 Material Growth.- 2.7.2 Contacts.- 2.7.3 Handling Techniques.- 2.7.4 Packaging.- 2.8 Performance.- 2.8.1 Power.- 2.8.2 Efficiency.- 2.8.3 Noise.- 2.9 New Transit-Time Device Concepts.- References.- 3. Schottky Contacts on Silicon.- 3.1 Schottky-Barrier Models.- 3.1.1 The Schottky Mott Model.- 3.1.2 The Space Charge Region.- 3.1.3 Bardeen's Model.- 3.1.4 Linear Models.- 3.1.5 Barrier Height Correlations.- 3.1.6 Advanced Models: Charge Transfer Across the Interface.- 3.2 Epitaxial Diodes on Si.- 3.2.1 Single-Crystalline Schottky Contacts.- 3.2.2 Other Orientational Dependences.- 3.2.3 CaSi2 and Ag.- 3.2.4 Polycrystalline Epitaxial Contacts on Si.- 3.2.5 Unconventional Metals with Small Lattice Mismatch to Si.- 3.2.6 Summary.- 3.3 Electrical Transport Properties.- 3.3.1 Emission Over the Barrier.- 3.3.2 Tunneling Through the Barrier.- 3.3.3 Generation Recombination in the Space Charge Region.- 3.3.4 Minority Carrier Injection.- 3.3.5 Inhomogeneities in Schottky Contacts.- 3.3.6 Noise Properties.- 3.3.7 Microwave Properties.- 3.4 Schottky-Barrier Measurements.- 3.4.1 Current-Voltage Curves.- 3.4.2 Capacitance Measurements.- 3.4.3 Internal Photoemission (Photoresponse).- 3.4.4 External Photoemission.- 3.4.5 Results for Polycrystalline Contacts.- 3.5 Conclusions.- References.- 4. SiGe Heterojunction Bipolar Transistors.- 4.1 Operation Principle of Homojunction and Heterojunction Bipolar Transistors.- 4.1.1 The Bipolar Junction Transistor and Its Physical Limits.- 4.1.2 The Heterojunction Bipolar Transistor.- 4.1.3 The Si/Ge Material System.- 4.2 Design of SiGe HBT Layers.- 4.2.1 Emitter Design.- 4.2.2 Base Design.- 4.2.3 Collector Design.- 4.3 Fabrication Technologies and Device Performance.- 4.4 Applications of SiGe HBTs.- 4.5 Conclusion.- References.- 5. Silicon Millimeter-Wave Integrated Circuits.- 5.1 Silicon as the Substrate Material.- 5.1.1 Silicon-Substrate Waveguide Parameters.- 5.1.2 Surface Waves.- 5.2 Millimeter-Wave Sources for SIMMWICs.- 5.2.1 IMPATT Oscillator.- 5.2.2 Varactor-Tuned Oscillator.- 5.2.3 HBT Oscillator.- 5.3 SIMMWIC Transmitter.- 5.3.1 Thermal Limitation of Monolithic IMPATT Diodes.- 5.3.2 Coplanar Slot-Line Transmitter.- 5.4 SIMMWIC Receiver.- 5.4.1 Microstrip Receiver.- 5.4.2 Coplanar Slot-Line Receiver.- 5.4.3 Resonant Tunneling Rectenna.- 5.5 SIMMWIC Switch.- References.- 6. Self-Mixing Oscillators.- 6.1 Principle of Operation.- 6.2 Linear Disturbance Theory.- 6.2.1 Model for the Self-mixing Oscillator.- 6.2.2 Conversion-Gain Factors.- 6.2.3 Simplified Device Model.- 6.3 Matrix Formulation of Conversion Gain.- 6.3.1 Conversion Matrix.- 6.3.2 Conversion Gain.- 6.4 Noise in Self-Mixing Oscillators.- 6.4.1 RF Noise.- 6.4.2 Low Frequency Noise.- 6.5 Numerical Simulations.- 6.6 Measuring Techniques and Experimental Results.- 6.6.1 Measuring Set-up.- 6.6.2 Experimental Results of a Si-IMPATT Device in the V-band.- References.- 7. Silicon Millimeter-Wave Integrated Circuit Technology.- 7.1 Technological Requirements for a Millimeter-Wave Substrate.- 7.1.1 Historical Background of SIMMWIC Technology.- 7.1.2 Characterization of High-Resistive Silicon Substrates.- 7.1.3 Behaviour of High-Resistive Silicon Substrates During Fabrication Processes.- 7.2 Basic Technologies.- 7.2.1 Buried Layers.- 7.2.2 Epitaxial Growth.- 7.2.3 Lithography.- 7.2.4 Pattern Transfer.- 7.2.5 Metallization and Air Bridge Technology.- 7.3 Fabrication Process and Monolithic Integration of Two-Terminal Devices.- 7.3.1 Fabrication Process of Coplanar Schottky-Barrier Diodes.- 7.3.2 Fabrication Process of Monolithically Integrated Transit-Time Diodes.- 7.3.3 Fabrication Process of Lateral PIN Diodes.- 7.4 Fabrication Process of Three-Terminal Devices.- 7.4.1 Bipolar Transistors.- 7.4.2 Hetero Bipolar Transistors for SIMMWICs.- 7.5 Summary and Prospects.- References.- 8. Future Devices.- 8.1 Physics and Applications of Si/SiGe, Double-Barrier Structures.- 8.1.1 Band Structure of Si/SiGe.- 8.1.2 Tunneling Current Calculation.- 8.1.3 The Quantum-Mechanical Concept of Electromagnetic Oscillations from Resonant-Tunneling Double Barriers.- 8.1.4 Calculation of fmax for n-type Si/SiGe Tunneling Diodes.- 8.1.5 Equivalent-Circuit Analysis of Oscillation Frequency and Output Power from an n-type Si/SiGe Double-Barrier Diode.- 8.1.6 Millimeter-Wave Detection by Si/SiGe Double Barriers.- 8.2 The Si/SiGe Quantum Barrier Varactor Diode.- 8.3 Field-Effect Devices: Si/SiGe MODFET and MOST, ?-Doped Si FET.- 8.3.1 dc and HF Modeling.- 8.3.2 Modeling Results and Comparison with Si n- and p-MOSTs.- 8.3.3 Experimental Results.- 8.3.4 Processing Steps: Growth and Post Processing.- Appendix 8.A The Effective-Mass Approximation.- Appendix 8.B Maximum Oscillation Frequency and Power Generation.- References.- 9. Future Applications.- 9.1 Sensor Applications.- 9.1.1 Measurement Principles.- 9.1.2 Radiometric Sensors.- 9.1.3 cw Radar Sensors.- 9.1.4 Frequency Modulated Radar Sensors.- 9.1.5 Pulse-Modulated Radars.- 9.2 Communication Applications.- 9.2.1 General Considerations.- 9.2.2 Identification Card Systems.- 9.2.3 Short-Range Data Transmission.- 9.2.4 Information Systems.- 9.2.5 Millimeter-Wave Data Bus.- 9.3 System Requirements.- 9.3.1 General System Aspects.- 9.3.2 Frequency Stability.- 9.3.3 Environmental Conditions.- 9.3.4 Packaging.- References.

Silicon-based millimeter-wave devices

An active receiving antenna for vehicles, including a slot-shaped antenna cut into the metallic vehicle body, and having small-depth cavity filled with a dielectric material which closes off the antenna toward the back or interior of the vehicle. A low-noise preamplifier, which is integrated into the dielectric material, is connected to the antenna via two feed lines of different length. The desired polarizations of the received signals are set via this preamplifier, which can be changed over and be switched off.

Active receiving antenna

This paper reports on extensive investigations on capacitive radio frequency (rf) microelectromechanical systems (MEMS) shunt airbridge switches especially among different environmental conditions. Single airbridge switches yield an insertion loss lower than 0.28 dB at 35 GHz and an isolation down to −38 dB at 35 GHz. The capacitance ratio Con/Coff is approximately 60 (best case). The measured temperature dependency of the pull-in voltage was −0.3 V/°C in the temperature range from −25 to 75°C. The measured switching time was 11 μs and the release time 7 μs. More than 5×104 switching cycles could be performed in a non-stabilised environment. For optimised switches no self-closing is observed up to 1 W rf power at 30 GHz. The measurement results are in good agreement with the simulated values.

Investigations of rf shunt airbridge switches among different environmental conditions

The invention relates to a multi-targeting method for locating short-range target objects in terms of distance and angle, said method comprising the following steps: a) a characteristic signal is emitted by a transmitting antenna (11) of a first sensor element (10); b) the reflected characteristic signal is received by at least two adjacent reception antennae (1, 2) of the first sensor element (10); c) the difference in transit time of the reflected characteristic signal to the two adjacent reception antenna (1, 2) of the first sensor element (10) is measured in order to determine the distance between the target objects and the first sensor element (10); and d) the phase differences of the characteristic signal between the two adjacent reception antenna (1, 2) of the first sensor element (10) are measured in order to determine the angles between the target objects and the first sensor element (10). The invention also relates to a device for implementing the above-mentioned method.

Multi-targeting method and multi-targeting sensor device for locating short-range target objects in terms of distance and angle

A new type of RF MEMS switch for low voltage actuation, high broadband application and high power capability is presented. Mechanical and electromagnetic simulations of this new RF MEMS switch type are shown and the fabrication process and measurement results are given. The switching element consists of a cantilever which is fixed by a suspension spring to the ground of the coplanar line. The closing voltage is 16V. The switches exhibit low insertion loss ( 22dB@30GHz).

Johann-Friedrich Luy

Papers

Silicon-based millimeter-wave devices

Active receiving antenna

Investigations of rf shunt airbridge switches among different environmental conditions

Multi-targeting method and multi-targeting sensor device for locating short-range target objects in terms of distance and angle

A New Type of High Bandwidth RF MEMS Switch - Toggle Switch