Showing papers by "Johannes Frisch published in 2009"

Controlling Electron and Hole Charge Injection in Ambipolar Organic Field-Effect Transistors by Self-Assembled Monolayers

Abstract: Controlling contact resistance in organic field-effect transistors (OFETs) is one of the major hurdles to achieve transistor scaling and dimensional reduction. In particular in the context of ambipolar and/or light-emitting OFETs it is a difficult challenge to obtain efficient injection of both electrons and holes from one injecting electrode such as gold since organic semiconductors have intrinsically large band gaps resulting in significant injection barrier heights for at least one type of carrier. Here, systematic control of electron and hole contact resistance in poly(9,9-di-n-octylfluorene-alt-benzothiadiazole) ambipolar OFETs using thiol-based self-assembled monolayers (SAMs) is demonstrated. In contrast to common believe, it is found that for a certain SAM the injection of both electrons and holes can be improved. This simultaneous enhancement of electron and hole injection cannot be explained by SAM-induced work-function modifications because the surface dipole induced by the SAM on the metal surface lowers the injection barrier only for one type of carrier, but increases it for the other. These investigations reveal that other key factors also affect contact resistance, including i) interfacial tunneling through the SAM, ii) SAM-induced modifications of interface morphology, and iii) the interface electronic structure. Of particular importance for top-gate OFET geometry is iv) the active polymer layer thickness that dominates the electrode/polymer contact resistance. Therefore, a consistent explanation of how SAM electrode modification is able to improve both electron and hole injection in ambipolar OFETs requires considering all mentioned factors.

Transparent, highly conductive graphene electrodes from acetylene-assisted thermolysis of graphite oxide sheets and nanographene molecules

Abstract: Transparent and highly conductive graphene electrodes have been fabricated through acetylene-assisted thermolysis of graphite oxide (GO) sheets. This novel procedure uses acetylene as a supplemental carbon source to repair substantial defects within GO sheets, leading to the enhancement of graphitization of synthesized graphene electrodes. The as-prepared graphene on quartz substrates exhibits an electrical conductivity of 1425 S cm(-1) with an optical transmittance of more than 70% at a wavelength of 500 nm. Such an acetylene-assisted thermal treatment approach is also adopted to fabricate graphene electrodes from synthetic nanographene molecules, with an almost five times increase in conductivity compared to samples prepared by the common thermal reduction.

A high molecular weight donor for electron injection interlayers on metal electrodes.

Abstract: The molecular donor 9,9'-ethane-1,2-diylidene-bis(N-methyl-9,10-dihydroacridine) (NMA) has been synthesized, and its electronic properties were characterized both in solution using cyclic voltammetry and optical absorption spectroscopy, and at interfaces to metals with photoelectron spectroscopy (PES). The optical energy gap of NMA in solution increases by 0.10 eV when the compound is doubly oxidized. On the basis of quantum-chemical calculations, this ipsochromic effect is rationalized by a change in geometry involving a severe torsion of the two acridinium moieties with respect to the central double bond, thus reducing conjugation upon oxidation. PES is reported for NMA deposited on Au(111), Ag(111), and Cu(111) single crystals. A decrease of the sample work function is observed that becomes larger with increasing molecular coverage and clearly exceeds values that would be expected for metal surface electron "push back" alone, confirming the electron donating nature of NMA. The growth mode of NMA on all three surfaces is almost layer-by-layer (Frank-van der Merwe). For tris(8-hydroxyquinoline)aluminum (Alq(3)) deposited on top of a NMA-modified Au(111) surface, the electron injection barrier (EIB) is reduced by 0.25 eV compared to that on pristine Au(111). Furthermore, the EIB reduction depends linearly on Phi of the donor-modified Au(111) surface, adjustable by NMA precoverage. This enables continuous tuning of the EIB in organic electronic devices, in order to optimize device efficiency and performance.