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John Bartko

Researcher at Westinghouse Electric

Publications -  21
Citations -  341

John Bartko is an academic researcher from Westinghouse Electric. The author has contributed to research in topics: Conductivity & Irradiation. The author has an hindex of 10, co-authored 21 publications receiving 341 citations.

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Patent

Production of highly conductive polymers for electronic circuits

TL;DR: In this paper, a process for producing stable, radiation hard, highly conductive polymers by a combination of chemical doping and ion irradiation and microelectronics is described, which may contain regions of different kinds of conductivity on the same polymer.
Patent

Prompt gamma neutron activation analysis system

TL;DR: A system for determining depth profiles of concentrations of hazardous elements in soils comprises a neutron source for generating neutrons of a first energy level and irradiating a volume of soil with the neutrons Nuclear reactions are effected within the soil and gamma radiation is emitted from the soil as discussed by the authors.
Patent

System and method for on-line monitoring and control of heavy metal contamination in soil washing process

TL;DR: In this article, x-rays, thermal neutrons or laser beams are directed at a slurry as it flows through a flow cell to induce emission of secondary x-ray, gamma rays or light, respectively, characteristic of the heavy metal contaminants and constituents representative of the solids contents of the slurry.
Patent

Reducing the switching time of semiconductor devices by neutron irradiation

TL;DR: In this article, the authors proposed a method of reducing the switching time of certain semiconductor devices and particularly gain-operated semiconductor device by adjusting the energy level of the radiation source to provide the depth of maximum defect generation adjacent a blocking PN junction.
Journal ArticleDOI

Electron irradiation induced recombination centers in silicon-minority carrier lifetime control

TL;DR: In this paper, the minority carrier lifetime control by electron irradiation has been developed into a reliable manufacturing process for power devices and the approximate location of these recombination centers in the forbidden gap and their densities are obtained by the thermally stimulated current method.