J
John J. Schermer
Researcher at Radboud University Nijmegen
Publications - 92
Citations - 2020
John J. Schermer is an academic researcher from Radboud University Nijmegen. The author has contributed to research in topics: Solar cell & Thin film. The author has an hindex of 21, co-authored 86 publications receiving 1770 citations. Previous affiliations of John J. Schermer include Applied Materials.
Papers
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Journal ArticleDOI
26.1% thin-film GaAs solar cell using epitaxial lift-off
TL;DR: In this paper, the epitaxial lift-off technique is used to separate a III-V solar cell structure from its underlying GaAs substrate, which leads to thin-film cells as good as cells on a substrate.
Journal ArticleDOI
Epitaxial Lift-Off for large area thin film III/V devices
John J. Schermer,Peter Mulder,Gerard Bauhuis,M.M.A.J. Voncken,J. van Deelen,E.J. Haverkamp,P.K. Larsen +6 more
TL;DR: In this article, the Epitaxial Lift-Off (ELO) technique was used to separate III/V device structures from their GaAs substrates, achieving area efficiency in excess of 20% upon front side illumination and more than 15% upon back side illumination.
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Wafer reuse for repeated growth of iii-v solar cells
Gerard Bauhuis,Peter Mulder,E.J. Haverkamp,John J. Schermer,Ed Bongers,G. Oomen,W. Köstler,G. Strobl +7 more
TL;DR: In this paper, the epitaxial lift-off (ELO) technique was used to separate a III-V solar cell structure from its underlying GaAs or Ge substrate, and 2-inch GaAs wafer reuse was demonstrated without degradation in performance of subsequent thin-film GaAs solar cells that were retrieved from it.
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Life‐cycle assessment of photovoltaic modules: Comparison of mc‐Si, InGaP and InGaP/mc‐Si solar modules
TL;DR: In this article, an environmental comparison between the production and use phase, except maintenance, of an indium-gallium-phosphide (InGaP) on multicrystalline silicon (mc-Si) tandem module, a thin-film InGaP cell module and a MC-Si module was carried out for a very limited industrial production scale.
Journal ArticleDOI
Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation
A.R.A. Zauner,Jan L. Weyher,Jan L. Weyher,M. Plomp,V. Kirilyuk,Izabella Grzegory,W.J.P. van Enckevort,John J. Schermer,P.R. Hageman,P.K. Larsen +9 more
TL;DR: In this paper, a model involving the interaction of steps, introduced by the misorientation, and the hexagonal hillocks during the growth process was proposed to explain the features that are still found on the 4° off-angle sample after growth.