Journal ArticleDOI
Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation
A.R.A. Zauner,Jan L. Weyher,Jan L. Weyher,M. Plomp,V. Kirilyuk,Izabella Grzegory,W.J.P. van Enckevort,John J. Schermer,P.R. Hageman,P.K. Larsen +9 more
TLDR
In this paper, a model involving the interaction of steps, introduced by the misorientation, and the hexagonal hillocks during the growth process was proposed to explain the features that are still found on the 4° off-angle sample after growth.About:
This article is published in Journal of Crystal Growth.The article was published on 2000-03-01. It has received 74 citations till now. The article focuses on the topics: Misorientation & Hillock.read more
Citations
More filters
Journal ArticleDOI
Substrates for gallium nitride epitaxy
L. Liu,James H. Edgar +1 more
TL;DR: In this paper, the structural, mechanical, thermal, and chemical properties of substrates used for gallium nitride (GaN) epitaxy are compiled, and the properties of GaN films deposited on these substrates are reviewed.
Patent
Iii-v nitride substrate boule and method of making and using the same
TL;DR: In this article, a Group III-V nitride boule is formed by growing a group III-v nitride material on a corresponding native Group III V nitride seed crystal by vapor phase epitaxy at a growth rate above 20 micrometers per hour.
Journal ArticleDOI
Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition
Sarah L. Keller,N. Fichtenbaum,Feng Wu,David F. Brown,A. Rosales,Steven P. DenBaars,James S. Speck,Umesh Mishra +7 more
TL;DR: In this paper, N-polar GaN films were grown on misoriented (0001) sapphire substrates and the development of a high temperature nucleation process was investigated.
Journal ArticleDOI
Recent progress in metal-organic chemical vapor deposition of $\left( 000\bar{1} \right)$ N-polar group-III nitrides
Stacia Keller,Haoran Li,Matthew A. Laurent,Yan-Ling Hu,Nathan Pfaff,Jing Lu,David F. Brown,Nicholas Fichtenbaum,James S. Speck,Steven P. DenBaars,Umesh K. Mishra +10 more
TL;DR: In this article, the progress in metal-organic chemical vapor deposition of high quality N-polar (Al, Ga, In)N films on sapphire, silicon carbide and silicon substrates is reviewed with focus on key process components such as utilization of vicinal substrates, conditions ensuring a high surface mobility of species participating in the growth process, and low impurity incorporation.
Journal ArticleDOI
Growth and characterization of N-polar InGaN/GaN multiquantum wells
TL;DR: In this paper, the properties of N-polar InGaN∕GaN multiquantum wells (MQWs) grown by metal-organic chemical vapor deposition were investigated.
References
More filters
Journal ArticleDOI
The Growth of Crystals and the Equilibrium Structure of their Surfaces
TL;DR: In this paper, it was shown that the rate of growth of a surface containing dislocations is proportional to the square of the supersaturation for low values and to the first power for high values of the latter.
Journal ArticleDOI
Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers
TL;DR: In this article, the polarity of the lattice of bulk single GaN crystals and homoepitaxial and heteroencipitation on sapphire GaN thin films has been studied using convergent beam electron diffraction.
Journal ArticleDOI
Chemical polishing of bulk and epitaxial GaN
TL;DR: In this article, it was shown that removal of a few tenths of a micron from the surface are usually sufficient to polish out irregularities 200 nm in height, and when optimized mechano-chemical polishing is used, atomically flat surfaces of bulk GaN have been reproducibly obtained (RMS= 0.1nm), as measured by Atomic Force Microscopy.
Journal ArticleDOI
Polarity of (00.1) GaN epilayers grown on a (00.1) sapphire
TL;DR: In this article, a simple etching technique is proposed for quick distinction of the epitaxial film polarity and the assignment of the etching behavior to the proper crystal structure is achieved by an analysis of the respective two-dimensional photoelectron diffraction patterns.