Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The p...

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Luminescence properties of defects in GaN

The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

http://science.sciencemag.org/content/sci/311/5758/208.full.pdf

Stretchable form of single crystal silicon for high performance electronics on rubber substrates

Solar energy represents one of the most abundant and yet least harvested sources of renewable energy. In recent years, tremendous progress has been made in developing photovoltaics that can be potentially mass deployed. Of particular interest to cost-effective solar cells is to use novel device structures and materials processing for enabling acceptable efficiencies. In this regard, here, we report the direct growth of highly regular, single-crystalline nanopillar arrays of optically active semiconductors on aluminium substrates that are then configured as solar-cell modules. As an example, we demonstrate a photovoltaic structure that incorporates three-dimensional, single-crystalline n-CdS nanopillars, embedded in polycrystalline thin films of p-CdTe, to enable high absorption of light and efficient collection of the carriers. Through experiments and modelling, we demonstrate the potency of this approach for enabling highly versatile solar modules on both rigid and flexible substrates with enhanced carrier collection efficiency arising from the geometric configuration of the nanopillars.

http://nano.eecs.berkeley.edu/publications/NatureMat_2009_SNOPcell.pdf

Three-dimensional nanopillar-array photovoltaics on low-cost and flexible substrates

Here, a general experimental method to determine the energy ECT of intermolecular charge-transfer (CT) states in electron donor–acceptor (D–A) blends from ground state absorption and electrochemical measurements is proposed. This CT energy is calibrated against the photon energy of maximum CT luminescence from selected D–A blends to correct for a constant Coulombic term. It is shown that ECT correlates linearly with the open-circuit voltage (Voc) of photovoltaic devices in D–A blends via eVoc = ECT − 0.5 eV. Using the CT energy, it is found that photoinduced electron transfer (PET) from the lowest singlet excited state (S1 with energy Eg) in the blend to the CT state (S1 → CT) occurs when Eg − ECT > 0.1 eV. Additionally, it is shown that subsequent charge recombination from the CT state to the lowest triplet excited state (ET) of D or A (CT → T1) can occur when ECT − ET > 0.1 eV. From these relations, it is concluded that in D–A blends optimized for photovoltaic action: i) the maximum attainable Voc is ultimately set by the optical band gap (eVoc = Eg − 0.6 eV) and ii) the singlet–triplet energy gap should be ΔEST < 0.2 eV to prevent recombination to the triplet state. These favorable conditions have not yet been met in conjugated materials and set the stage for further developments in this area.

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The energy of charge-transfer states in electron donor-acceptor blends : insight into the energy losses in organic solar cells

In this review, the structural, mechanical, thermal, and chemical properties of substrates used for gallium nitride (GaN) epitaxy are compiled, and the properties of GaN films deposited on these substrates are reviewed. Among semiconductors, GaN is unique; most of its applications uses thin GaN films deposited on foreign substrates (materials other than GaN); that is, heteroepitaxial thin films. As a consequence of heteroepitaxy, the quality of the GaN films is very dependent on the properties of the substrate—both the inherent properties such as lattice constants and thermal expansion coefficients, and process induced properties such as surface roughness, step height and terrace width, and wetting behavior. The consequences of heteroepitaxy are discussed, including the crystallographic orientation and polarity, surface morphology, and inherent and thermally induced stress in the GaN films. Defects such as threading dislocations, inversion domains, and the unintentional incorporation of impurities into the epitaxial GaN layer resulting from heteroepitaxy are presented along with their effect on device processing and performance. A summary of the structure and lattice constants for many semiconductors, metals, metal nitrides, and oxides used or considered for GaN epitaxy is presented. The properties, synthesis, advantages and disadvantages of the six most commonly employed substrates (sapphire, 6H-SiC, Si, GaAs, LiGaO 2 , and AlN) are presented. Useful substrate properties such as lattice constants, defect densities, elastic moduli, thermal expansion coefficients, thermal conductivities, etching characteristics, and reactivities under deposition conditions are presented. Efforts to reduce the defect densities and to optimize the electrical and optical properties of the GaN epitaxial film by substrate etching, nitridation, and slight misorientation from the (0 0 0 1) crystal plane are reviewed. The requirements, the obstacles, and the results to date to produce zincblende GaN on 3C-SiC/Si(0 0 1) and GaAs are discussed. Tables summarizing measures of the GaN quality such as XRD rocking curve FWHM, photoluminescence peak position and FWHM, and electron mobilities for GaN epitaxial layers produced by MOCVD, MBE, and HVPE for each substrate are given. The initial results using GaN substrates, prepared as bulk crystals and as free-standing epitaxial films, are reviewed. Finally, the promise and the directions of research on new potential substrates, such as compliant and porous substrates are described.

Substrates for gallium nitride epitaxy

The present work describes the study and improvement of the Epitaxial Lift-Off (ELO) technique, which is used to separate III/V device structures from their GaAs substrates. As a result the ELO method, initially able to separate millimetre sized GaAs layers with a lateral etch rate of about 0.3 mm/h, has been developed to a process capable to free entire 2 '' epitaxial structures from their substrates with etch rates up to 30 mm/h. It is shown that with the right deposition and ELO strategy, the thin-film III/V structures can be adequately processed on both sides. In this way semi-transparent, bifacial solar cells on glass were produced with a total area efficiency in excess of 20% upon front side illumination and more than 15% upon back side illumination. The cell characteristics indicate that, once the thin film processing has been optimized, ELO cells require a significantly thinner base layer than regular III/V cells on a GaAs substrate and at the same time have the potential to reach a higher efficiency. (c) 2005 WILEY-VCH Verlag GmbH T Co.

Epitaxial Lift-Off for large area thin film III/V devices

Epitaxial PbZrxTi1−xO3 (PZT) films have been prepared by metalorganic chemical vapor deposition on SrTiO3 substrates. Two sets of films of thicknesses 50–100 and 700–1400 nm, containing 0%, 40%, 60%, and 100% Zr, were prepared and investigated. The refractive index n was determined by ellipsometry for the thin films and by reflectivity for the thicker films. Results were obtained over the energy range from 1.55 to 3.72 eV, and with a Cauchy-fit extrapolation down to 0.62 eV. The refractive-index curves show a systematic variation with composition. For all compositions, n is close to 3.2 at 3.72 eV (333 nm), while at 1.55 eV (800 nm) n is 2.35 for PZ (x=1) and 2.61 for PT (x=0). In agreement with previous results we find that the optical band gap is essentially independent of composition for PZT. We obtained 3.6±0.1 eV. The n(E) results were analyzed by a Wemple–DiDomenico dispersion analysis, yielding results for the dispersion region in the ultraviolet. Unlike the band gap, which is insensitive to composition in PZT, the dispersion energy Ed decreases from PT to PZ in the same fashion as the refractive index in the transparent region.

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Optical properties of PbTiO3, PbZrxTi1-xO3, and PbZrO3 films deposited by metalorganic chemical vapor on SrTiO3

Photon confinement in high-efficiency, thin-film III–V solar cells obtained by epitaxial lift-off

Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)

Centimeter sized, crack-free single crystal InGaP films of 1 μm thickness were released from GaAs substrates by a weight-induced epitaxial lift-off process. At room temperature, the lateral etch rate of the process as a function of the applied Al0.85Ga0.15As release layer thickness was found to have a maximum of 3 mm/h at 3 nm. Using 5-nm-thick AlAs release layers, the etch rate increased exponentially with temperature up to 11.2 mm/h at 80 °C. Correlation of the experimental data with the established theoretical description of the process indicate that the model is qualitatively correct but fails to predict the etch rates quantitatively by orders of magnitude.

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P.K. Larsen

Papers

Epitaxial Lift-Off for large area thin film III/V devices

Optical properties of PbTiO3, PbZrxTi1-xO3, and PbZrO3 films deposited by metalorganic chemical vapor on SrTiO3

Photon confinement in high-efficiency, thin-film III–V solar cells obtained by epitaxial lift-off

Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)

High rate epitaxial lift-off of InGaP films from GaAs substrates