Showing papers by "John L. Freeouf published in 1986"
IBM1
TL;DR: In this paper, it was shown that the sensitivity of band offsets to changes in pinning at heterojunction interfaces is related to those mechanisms involved in Fermi-level "pinned" systems.
29 citations
IBM1
TL;DR: In this article, an improved method for the analysis of multi-exponential transients with high resolution has been applied to DLTS, using the technique of Modulating Functions, using full-waveform fittings, made to digitized transients captured by a computer.
Abstract: An improved method for the analysis of multi-exponential transients with high resolution has been applied to DLTS. Full-waveform fittings, using the technique of Modulating Functions, are made to digitized transients captured by a computer. This technique is described and results for both simulated data (with noise) and real data are shown. The advantages over previously published techniques in resolution, calculation speed, insensitivity to truncation error and noise are discussed. Also, how this method allows for a determination of the number of components is presented.
15 citations
Patent•
IBM1
TL;DR: In this paper, a GaAs channel FET with a multilayer gate comprising, in order of proximity to the GaA channel, a gate layer (3), a charge storage layer (8), an asymmetric barrier layer (10), graded towards the GaAs storage layer and an ohmic adapting layer (13) of GaAs is presented.
Abstract: Reversible control of conduction in a band offset heterojunction field effect transistor device is achieved by .an asymmetric barrier (10) which can position a potential well across the Fermi level to produce conduction and away from the Fermi level for a non-conducting condition and to retain that position in the absence of a signal. The device can be a GaAs channel FET with a multilayer gate comprising, in order of proximity to the GaAs channel, a gate layer (3) of GaA1As, a charge storage layer (8) of GaAs, an asymmetric barrier layer (10) of GaA1As graded towards the GaAs storage layer and an ohmic adapting layer (13) of GaAs.
9 citations
Patent•
IBM1
TL;DR: In this article, a semiconductor device where an emitter material composition and doping profile produces an electron gas in a base adjacent a band offset heterojunction interface, the electrons in the gas in the base are confined under bias by a low barrier and the ballistic carriers have their kinetic energy controlled to prevent intervalley scattering by an electrostatic barrier that under influence of bias provides an essentially level conduction band in the portion of the base adjacent the collector.
Abstract: A semiconductor device where an emitter material composition and doping profile produces an electron gas in a base adjacent a band offset heterojunction interface, the electrons in the electron gas in the base are confined under bias by a low barrier and the ballistic carriers have their kinetic energy controlled to prevent intervalley scattering by an electrostatic barrier that under influence of bias provides an essentially level conduction band in the portion of the base adjacent the collector.
5 citations
Patent•
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IBM1
TL;DR: In this article, the electron gas is confined adjacent to the interface by a low barrier produced by layer 10 and the kinetic energy of ballistic electrons crossing the base to the collector is controlled to prevent intervalley scattering by an electrostatic barrier.
Abstract: The composition and doping profile of the emitter (4) produces an electron gas (16) in the base (3) adjacent a band offset heterojunction interface be- 'tween the emitter and the base. When a suitable bias is applied, the electron gas is confined adjacent to the interface by a low barrier (produced by layer 10). The kinetic energy of ballistic electrons crossing the base to the collector (2) is controlled to prevent intervalley scattering by an electrostatic barrier (7) that under influence of bias provides an essentially level conduction band in the portion of the base adjacent the collector.
1 citations