Jong Baek Seon

TL;DR: In this paper, the authors have fabricated high performance and high-stability sol-gel-processed MgInZnO thin films transistors with varying Mg content.

TL;DR: In this article, the effects of adding Hf into a InZnO (IZO) system, particularly the electrical characteristics of their thin film and thin film transistors (TFTs), were investigated as a function of atomic concentration from 0 to 10 at.

TL;DR: In this article, the structural, optical, and electrical effects of Hf incorporation as a function of atomic concentration were investigated using the solution process, and it was suggested that Hf could replace Ga as a carrier suppressor in the InZnO (IZO) system due to its low standard electrode potential, reflecting the oxidizing tendency of a metal cation.

TL;DR: In this paper, the performance and stability of amorphous HfInZnO thin film transistors under visible light illumination were studied, and the extent of device degradation upon negative bias stress with the presence of visible light was found to be strongly sensitive to the degree of photoelectric effect in the oxide semiconductor.

TL;DR: In this article, the optical absorption in the sub-gap region of amorphous indium zinc oxide films and the photo-induced negative bias stability of the resulting thin film transistors were studied.