S
Seongil Im
Researcher at Yonsei University
Publications - 369
Citations - 14965
Seongil Im is an academic researcher from Yonsei University. The author has contributed to research in topics: Thin-film transistor & Pentacene. The author has an hindex of 54, co-authored 357 publications receiving 13552 citations. Previous affiliations of Seongil Im include University of California, Berkeley & University of California.
Papers
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MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap
Hee Sung Lee,Sung Wook Min,Youn Gyung Chang,Min Kyu Park,Taewook Nam,Hyungjun Kim,Jae Hoon Kim,Sunmin Ryu,Seongil Im +8 more
TL;DR: The fabrication of top-gate phototransistors based on a few-layered MoS(2) nanosheet with a transparent gate electrode exhibited excellent photodetection capabilities for red light, while those with single- and double-layers turned out to be quite useful for green light detection.
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Improving the Gate Stability of ZnO Thin-Film Transistors with Aluminum Oxide Dielectric Layers
TL;DR: In this article, a gate-stable ZnO thin-film transistors (TFTs) with aluminum oxide dielectric was fabricated. But the gate-bias reliability of the TFT was not improved.
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42.3: Transparent ZnO Thin Film Transistor for the Application of High Aperture Ratio Bottom Emission AM‐OLED Display
Sang-Hee Ko Park,Min-Ki Ryu,Chi-Sun Hwang,Shinhyuk Yang,Chun-Won Byun,Jeong-Ik Lee,Jaeheon Shin,Sung Min Yoon,Hye Yong Chu,Kyoung Ik Cho,Kimoon Lee,Min Suk Oh,Seongil Im +12 more
TL;DR: In this paper, the bias stability of ZnO TFT was improved by optimizing the deposition and first gate insulator process, which made the TFT very stable under electrical bias stress.
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Violet and UV luminescence emitted from ZnO thin films grown on sapphire by pulsed laser deposition
TL;DR: In this article, the violet photoluminescence was achieved at room temperature (RT) from ZnO films grown on sapphire (001) substrate by pulsed laser deposition (PLD).
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Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure
TL;DR: In this paper, the photoelectric properties of n-ZnO/p-Si photodiodes were investigated for detecting UV and visible photons in the depleted ZnO and p-Si, respectively.