Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Semiconductor device and display device

Results on indium-oxide-based transparent oxide TFTs, which the active layer is prepared by DC sputtering, are presented. The fabricated TOS TFTs show high mobility (37 cm2/V-s), high ON/OFF current ratio and large on-state current. Fabricating oxide TFTs on temperature-sensitive substrates is also attainable owing to the low temperature process of the active layer preparation.

15.4: Excellent Performance of Indium‐Oxide‐Based Thin‐Film Transistors by DC Sputtering

We have developed a 4.0 inch QVGA AMOLED display using amorphous In-Ga-Zn-Oxide TFTs, focusing on a passivation layer. Threshold voltage of the TFTs can be controlled to have “normally off” characteristics by using SiOx with a low hydrogen content. Besides, small subthreshold swing and high saturation mobility are obtained.

21.3: 4.0 In. QVGA AMOLED Display Using In-Ga-Zn-Oxide TFTs with a Novel Passivation Layer

The full color 121-inch WXGA active-matrix organic light emitting diode (AMOLED) display was, for the first time, demonstrated using indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) as an active-matrix back plane It was found that the fabricated AMOLED display did not suffer from the well-known pixel non-uniformity of luminance, even though the simple structure consisting of 2 transistors and 1 capacitor was adopted as a unit pixel circuit, which was attributed to the amorphous nature of IGZO semiconductor The n-channel a-IGZO TFTs exhibited the field-effect mobility of 82 cm2/Vs, threshold voltage of 11 V, on/off ratio of > 108, and subthreshold gate swing of 058 V/decade The AMOLED display with a-IGZO TFT array would be promising for large size applications such as note PC and HDTV because a-IGZO semiconductor can be deposited on large glass substrate (> Gen 7) using conventional sputtering system

3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array

A display device and an electronic watch including the same are disclosed. In one aspect, the display device includes a substrate having a through-hole. The display device also includes a display unit formed on the substrate and surrounding the through-hole, the display unit configured to display an image.

Display device and electronic watch including the same

A display device according to an exemplary embodiment includes: a first display unit having a polygon shape for displaying an image; and a plurality of second display units displaying an image and respectively disposed adjacent to respective sides of the polygon of the first display unit. The plurality of second display units may be bent based on the respective sides such that the first display unit and the plurality of second display units form a three-dimensional shape.

Multi-screen display device and manufacturing method thereof

An organic light emitting display device comprises: a substrate; a first thin film transistor including a first active pattern located on the substrate and having a channel region, and a first gate electrode located on the channel region of the first active pattern; a gate insulation layer configured to cover the first active pattern wherein the gate insulation layer includes a plurality of open holes adjacent to the channel region of the first active pattern; and an organic light emitting element connected to the first active pattern.

Display device and watch having the same

A touch panel includes: a substrate; touch electrodes disposed on the substrate, the touch electrodes being configured to sense a touch input; and touch signal lines each connected to one of the touch electrodes, the touch signal lines each including a fanout portion and a pad portion, the pad portion being electrically connected to a touch controller. Each of the fanout portion and the pad portion includes a first conductor, a second conductor disposed on the first conductor, and a third conductor disposed on the second conductor, and a passivation layer disposed on the third conductor.

Jong Hyun Choi

Papers

3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array

Display device and electronic watch including the same

Multi-screen display device and manufacturing method thereof

Display device and watch having the same

Touch panel including multilayer touch signal line