Journal ArticleDOI
3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array
Jae Kyeong Jeong,Jong Han Jeong,Jong Hyun Choi,Jang Soon Im,Sung Ho Kim,Hui Won Yang,Ki Nyeng Kang,Kwang Suk Kim,Tae Kyung Ahn,Hyun-Joong Chung,Min-Kyu Kim,Bon Seog Gu,Jin-Seong Park,Yeon-Gon Mo,Hye-Dong Kim,Ho Kyoon Chung +15 more
- Vol. 39, Iss: 1, pp 1-4
TLDR
In this paper, a 121-inch WXGA active-matrix organic light emitting diode (AMOLED) display was demonstrated using indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) as an activematrix back plane.Abstract:
The full color 121-inch WXGA active-matrix organic light emitting diode (AMOLED) display was, for the first time, demonstrated using indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) as an active-matrix back plane It was found that the fabricated AMOLED display did not suffer from the well-known pixel non-uniformity of luminance, even though the simple structure consisting of 2 transistors and 1 capacitor was adopted as a unit pixel circuit, which was attributed to the amorphous nature of IGZO semiconductor The n-channel a-IGZO TFTs exhibited the field-effect mobility of 82 cm2/Vs, threshold voltage of 11 V, on/off ratio of > 108, and subthreshold gate swing of 058 V/decade The AMOLED display with a-IGZO TFT array would be promising for large size applications such as note PC and HDTV because a-IGZO semiconductor can be deposited on large glass substrate (> Gen 7) using conventional sputtering systemread more
Citations
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Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
Patent
Semiconductor device, and manufacturing method thereof
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Patent
Semiconductor device and display device
Hajime Kimura,Shunpei Yamazaki +1 more
TL;DR: In this paper, a connection terminal portion is provided with a plurality of connection pads which are part of the connection terminal, each of which includes a first connection pad and a second connection pad having a line width different from that of the first one.
Journal ArticleDOI
15.4: Excellent Performance of Indium‐Oxide‐Based Thin‐Film Transistors by DC Sputtering
Ming-Hsien Lee,Ching-Chieh Shih,Jim-Shone Chen,Wei-Ming Huang,Feng-Yuan Gan,Yi-Chi Shih,Cindy X. Qiu,Ishiang Shih +7 more
TL;DR: In this article, an indium-oxide-based transparent oxide TFT, which the active layer is prepared by DC sputtering, is presented, and the fabricated TOS TFTs show high mobility (37 cm2/V-s), high ON/OFF current ratio and large onstate current.
Journal ArticleDOI
21.3: 4.0 In. QVGA AMOLED Display Using In-Ga-Zn-Oxide TFTs with a Novel Passivation Layer
Hiroki Ohara,Toshinari Sasaki,Kousei Noda,Shunichi Ito,Miyuki Sasaki,Yayoi Toyosumi,Yuta Endo,Shuhei Yoshitomi,Junichiro Sakata,Tadashi Serikawa,Shunpei Yamazaki +10 more
TL;DR: In this paper, a 4.0 inch QVGA AMOLED display using amorphous In-Ga-Zn-Oxide TFTs, focusing on a passivation layer, was developed.
References
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Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
Journal ArticleDOI
Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment
TL;DR: The effect of Ar plasma treatment on amorphous indium gallium zinc oxide (a-IGZO) thin films was investigated in this paper, where the authors attempted to reduce the contact resistance between the Pt∕Ti (source/drain electrode) and a-IZO (channel).
Journal ArticleDOI
High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
Hisato Yabuta,Masafumi Sano,Katsumi Abe,Toshiaki Aiba,Tohru Den,Hideya Kumomi,Kenji Nomura,Toshio Kamiya,Hideo Hosono +8 more
TL;DR: In this paper, a-IGZO channels were fabricated using amorphous indium gallium zinc oxide channels by rf-magnetron sputtering at room temperature.
Journal ArticleDOI
High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper
Min-Kyu Kim,Jong Han Jeong,Hun Jung Lee,Tae Kyung Ahn,Hyun Soo Shin,Jin-Seong Park,Jae Kyeong Jeong,Yeon-Gon Mo,Hye-Dong Kim +8 more
TL;DR: In this article, thin film transistors (TFTs) were fabricated using an amorphous indium gallium zinc oxide (a-IGZO) channel, by rf sputtering at room temperature and for which the channel length and width are patterned by photolithography and dry etching.
Journal ArticleDOI
Polysilicon TFT technology for active matrix OLED displays
TL;DR: In this paper, the integration of active matrix polysilicon TFT technology with organic light emitting diode (OLED) displays has been investigated with the goal of producing displays of uniform brightness.