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Joseph P. Donnelly

Researcher at Massachusetts Institute of Technology

Publications -  196
Citations -  4057

Joseph P. Donnelly is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Laser & Semiconductor laser theory. The author has an hindex of 36, co-authored 196 publications receiving 3900 citations. Previous affiliations of Joseph P. Donnelly include Brigham and Women's Hospital.

Papers
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Journal ArticleDOI

Biomimetic gradient hydrogels for tissue engineering

TL;DR: This review draws on specific biological examples to motivate hydrogel gradients as tools for studying cell-material interactions and summarizes the current and future trends in gradient hydrogels and cell- material interactions in context with the long-term goals of tissue engineering.
Patent

Planar optical waveguide, modulator, variable coupler and switch

TL;DR: In this article, a planar semiconductor optical waveguide, modulator, variable coupler and switch are described, and the coupling length is such that substantially all the optical energy in the input channel is coupled to and emerges from the other channel.
Journal ArticleDOI

Design Considerations for 1.06- $mu$ m InGaAsP–InP Geiger-Mode Avalanche Photodiodes

TL;DR: In this paper, a device model based on experimental data that can simultaneously predict dark count rate and photon detection efficiency (PDE) as a function of overbias and temperature is presented.
Journal ArticleDOI

Near-diffraction-limited diode laser arrays by wavelength beam combining.

TL;DR: This work demonstrates 35 W output peak power with M2 approximately 1.35 in both dimensions from a 100 element, 100 microm pitch slab-coupled optical waveguide laser diode array using wavelength beam combining.
Patent

Hybrid two-dimensional surface-emitting laser arrays

TL;DR: In this paper, a two-dimensional surface-emitting diode laser arrays are described that take advantage of both the advanced state of development of linear laser arrays with conventional cleaved end faces and the rapid development of Si heat sink technology.