THE DESIGN AND ANALYSIS OF EXPERIMENTS. By Oscar Kempthorne. New York, John Wiley and Sons, Inc., 1952. 631 pp. $8.50. This book by a teacher of statistics (as well as a consultant for \"experimenters\") is a comprehensive study of the philosophical background for the statistical design of experiment. It is necessary to have some facility with algebraic notation and manipulation to be able to use the volume intelligently. The problems are presented from the theoretical point of view, without such practical examples as would be helpful for those not acquainted with mathematics. The mathematical justification for the techniques is given. As a somewhat advanced treatment of the design and analysis of experiments, this volume will be interesting and helpful for many who approach statistics theoretically as well as practically. With emphasis on the \"why,\" and with description given broadly, the author relates the subject matter to the general theory of statistics and to the general problem of experimental inference. MARGARET J. ROBERTSON

The Design and Analysis of Experiments

Communication at millimeter wave (mmWave) frequencies is defining a new era of wireless communication. The mmWave band offers higher bandwidth communication channels versus those presently used in commercial wireless systems. The applications of mmWave are immense: wireless local and personal area networks in the unlicensed band, 5G cellular systems, not to mention vehicular area networks, ad hoc networks, and wearables. Signal processing is critical for enabling the next generation of mmWave communication. Due to the use of large antenna arrays at the transmitter and receiver, combined with radio frequency and mixed signal power constraints, new multiple-input multiple-output (MIMO) communication signal processing techniques are needed. Because of the wide bandwidths, low complexity transceiver algorithms become important. There are opportunities to exploit techniques like compressed sensing for channel estimation and beamforming. This article provides an overview of signal processing challenges in mmWave wireless systems, with an emphasis on those faced by using MIMO communication at higher carrier frequencies.

An Overview of Signal Processing Techniques for Millimeter Wave MIMO Systems

Due to the unprecedented growth in wireless applications over the past decade, development of low-cost solutions for RF and microwave communication systems has become of great importance. This practical new book is the first comprehensive treatment of lumped elements, which are playing a critical role in the development of the circuits that make these cost-effective systems possible. The books offers you an in-depth understanding of the different types of RF and microwave circuit elements, including inductors, capacitors, resistors, transformers, via holes, airbridges, and crossovers. Supported with over 220 equations and more than 200 illustrations, it covers the practical aspects of each element in exceptional detail. No other single volume treats this subject matter in such depth. From materials, fabrication, and analyses - to design, modeling, and physical, electrical, and thermal applications, this unique resource offers you complete coverage of the critical topics you need understand for your work in the field. Offering the most comprehensive, up-to-date body of knowledge on lumped elements, the book is an indispensable professional reference and serves as an excellent text for senior undergraduate and graduate-level courses in RF and microwave circuit design.

Lumped Elements for RF and Microwave Circuits

Although compound semiconductors like gallium arsenide have a substantial performance advantage over silicon in photovoltaic and optoelectronic applications, these do not outweigh the costly process of growing large, high-quality layers of these materials and transferring them to flexible or transparent substrates for use in devices such as solar cells, night vision cameras and wireless communication systems. But now John Rogers and his team demonstrate a new fabrication approach that may remove this disadvantage. They grow films of GaAs and AlGaAs in thick, multilayered assemblies in a single deposition sequence, then release the individual layers and distribute them over foreign substrates by printing. The technological potential of this strategy to large-area applications is illustrated with the fabrication of GaAs devices such as field-effect transistors on glass and photovoltaic modules on sheets of plastic. Although compound semiconductors like gallium arsenide (GaAs) offer advantages over silicon for photovoltaic and optoelectronic applications, these do not outweigh the costly process of growing large layers of these materials and transferring them to appropriate substrates. However, a new fabrication approach is now demonstrated: films of GaAs and AlGaAs are grown in thick, multilayered assemblies in a single sequence; the individual layers are then released and distributed over foreign substrates by printing. Compound semiconductors like gallium arsenide (GaAs) provide advantages over silicon for many applications, owing to their direct bandgaps and high electron mobilities. Examples range from efficient photovoltaic devices1,2 to radio-frequency electronics3,4 and most forms of optoelectronics5,6. However, growing large, high quality wafers of these materials, and intimately integrating them on silicon or amorphous substrates (such as glass or plastic) is expensive, which restricts their use. Here we describe materials and fabrication concepts that address many of these challenges, through the use of films of GaAs or AlGaAs grown in thick, multilayer epitaxial assemblies, then separated from each other and distributed on foreign substrates by printing. This method yields large quantities of high quality semiconductor material capable of device integration in large area formats, in a manner that also allows the wafer to be reused for additional growths. We demonstrate some capabilities of this approach with three different applications: GaAs-based metal semiconductor field effect transistors and logic gates on plates of glass, near-infrared imaging devices on wafers of silicon, and photovoltaic modules on sheets of plastic. These results illustrate the implementation of compound semiconductors such as GaAs in applications whose cost structures, formats, area coverages or modes of use are incompatible with conventional growth or integration strategies.

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GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies

Reconfigurable antennas, with the ability to radiate more than one pattern at different frequencies and polarizations, are necessary in modern telecommunication systems. The requirements for increased functionality (e.g., direction finding, beam steering, radar, control, and command) within a confined volume place a greater burden on today's transmitting and receiving systems. Reconfigurable antennas are a solution to this problem. This paper discusses the different reconfigurable components that can be used in an antenna to modify its structure and function. These reconfiguration techniques are either based on the integration of radio-frequency microelectromechanical systems (RF-MEMS), PIN diodes, varactors, photoconductive elements, or on the physical alteration of the antenna radiating structure, or on the use of smart materials such as ferrites and liquid crystals. Various activation mechanisms that can be used in each different reconfigurable implementation to achieve optimum performance are presented and discussed. Several examples of reconfigurable antennas for both terrestrial and space applications are highlighted, such as cognitive radio, multiple-input-multiple-output (MIMO) systems, and satellite communication.

Reconfigurable Antennas for Wireless and Space Applications

This paper presents a compact system-on-package-based front-end solution for 60-GHz-band wireless communication/sensor applications that consists of fully integrated three-dimensional (3-D) cavity filters/duplexers and antenna. The presented concept is applied to the design, fabrication, and testing of V-band (receiver (Rx): 59-61.5 GHz, transmitter (Tx): 61.5-64 GHz) transceiver front-end module using multilayer low-temperature co-fired ceramic technology. Vertically stacked 3-D low-loss cavity bandpass filters are developed for Rx and Tx channels to realize a fully integrated compact duplexer. Each filter exhibits excellent performance (Rx: IL<2.37 dB, 3-dB bandwidth (BW) /spl sim/3.5%, Tx: IL<2.39 dB, 3-dB BW /spl sim/3.33%). The fabrication tolerances contributing to the resonant frequency experimental downshift were investigated and taken into account in the simulations of the rest devices. The developed cavity filters are utilized to realize the compact duplexers by using microstrip T-junctions. This integrated duplexer shows Rx/Tx BW of 4.20% and 2.66% and insertion loss of 2.22 and 2.48 dB, respectively. The different experimental results of the duplexer compared to the individual filters above are attributed to the fabrication tolerance, especially on microstrip T-junctions. The measured channel-to-channel isolation is better than 35.2 dB across the Rx band (56-58.4 GHz) and better than 38.4 dB across the Tx band (59.3-60.9 GHz). The reported fully integrated Rx and Tx filters and the dual-polarized cross-shaped patch antenna functions demonstrate a novel 3-D deployment of embedded components equipped with an air cavity on the top. The excellent overall performance of the full integrated module is verified through the 10-dB BW of 2.4 GHz (/spl sim/4.18%) at 57.45 and 2.3 GHz (/spl sim/3.84%) at 59.85 GHz and the measured isolation better than 49 dB across the Rx band and better than 51.9 dB across the Tx band.

A V-band front-end with 3-D integrated cavity filters/duplexers and antenna in LTCC technologies

Data throughput rates are increased in an optical fiber communication system without requiring replacement of the existing optical fiber in a link. Channel throughput is increased by upgrading the components and circuitry in the head and terminal of an optical fiber communication system link. Aggregate throughput in a fiber optic link is increased beyond the range of conventional Wavelength Division Multiplexed (WDM) upgrades, while precluding the necessity of replacing existing fiber plants. The increase in system throughput is achieved by using advanced modulation techniques to encode greater amounts of data into the transmitted spectrum of a channel, thereby increasing the spectral efficiency of each channel. This novel method of increasing transmission capacity by upgrading the head and terminal of the system to achieve greater spectral efficiency and hence throughput, alleviates the need to replace existing fiber plants. Spectrally efficient complex modulation techniques can be supported by interface circuits with an increased level of signal processing capability in order to both encode multiple bits into a transmitted symbol and decode the original data from the received symbols.

Increasing data throughput in optical fiber transmission systems

This paper presents a compact system-on-package-based front-end solution for 60-GHz-band wireless communication/sensor applications that consists of fully integrated three-dimensional (3-D) cavity filters/duplexers and antenna. The presented concept is applied to the design, fabrication, and testing of V-band (receiver (Rx): 59-61.5 GHz, transmitter (Tx): 61.5-64 GHz) transceiver front-end module using multilayer low-temperature co-fired ceramic technology. Vertically stacked 3-D low-loss cavity bandpass filters are developed for Rx and Tx channels to realize a fully integrated compact duplexer. Each filter exhibits excellent performance (Rx: IL < 2.37 dB, 3-dB bandwidth (BW)∼ 3.5%, Tx:IL < 2.39dB,3-dBBW ∼ 3.33%). The fabrication tolerances contributing to the resonant frequency experimental downshift were investigated and taken into account in the simulations of the rest devices. The developed cavity filters are utilized to realize the compact duplexers by using microstrip T-junctions. This integrated duplexer shows Rx/Tx BW of 4.20% and 2.66% and insertion loss of 2.22 and 2.48 dB, respectively. The different experimental results of the duplexer compared to the individual filters above are attributed to the fabrication tolerance, especially on microstrip T-junctions. The measured channel-to-channel isolation is better than 35.2 dB across the Rx band (56-58.4 GHz) and better than 38.4 dB across the Tx band (59.3-60.9 GHz). The reported fully integrated Rx and Tx filters and the dual-polarized cross-shaped patch antenna functions demonstrate a novel 3-D deployment of embedded components equipped with an air cavity on the top. The excellent overall performance of the full integrated module is verified through the 10-dB BW of2.4GHz ( ∼ 4.18%) at 57.45 and 2.3 GHz (∼ 3.84%) at 59.85 GHz and the measured isolation better than 49 dB across the Rx band and better than 51.9 dB across the Tx band.

A novel antenna configuration for quad-band operation is presented. The quad-band antenna has a directional radiation pattern in four frequency bands, i.e., B1 (800-900 MHz), B2 (1.7-2.5 GHz), B3 (3.3-3.6 GHz), and B4 (5.1-5.9 GHz), covering all spectrums for existing wireless applications, such as GSM, PCS, WCDMA, WiFi, and WiMax. The operating frequency of the quad-band antenna can be adjusted by the use of a MEMS switch, making it suitable for cognitive radio applications. First a switchable quad-band antenna element is introduced. Then a two-element antenna array is developed to increase the antenna gain for base station applications featuring a gain value of about 9-11 dBi over all four frequency bands.

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Switchable Quad-Band Antennas for Cognitive Radio Base Station Applications

A common-gate (CG) LNA has been widely investigated because it features superior bandwidth, linearity, stability, and robustness to PVT variations compared to a common-source (CS) topology [1]. In spite of these advantages, the dependence of gain and NF on the restricted transconductance (gm) renders this topology unsuitable for various wireless applications. The input impedance of a CG LNA is simplified as 1/gm, and the noise factor is inversely proportional to gm [2]. In order to achieve high gain and low NF, gm should be increased, which deteriorates the 50Ω input impedance matching for a conventional CG LNA.

Joy Laskar

Papers

A V-band front-end with 3-D integrated cavity filters/duplexers and antenna in LTCC technologies

Increasing data throughput in optical fiber transmission systems

A V-band front-end with 3-D integrated cavity filters/duplexers and antenna in LTCC technologies

Switchable Quad-Band Antennas for Cognitive Radio Base Station Applications

A 3.6mW differential common-gate CMOS LNA with positive-negative feedback