Showing papers by "József Gyulai published in 1976"
01 Jan 1976
TL;DR: In this paper, a simple theoretical background for the use of the 16o (α, α) 16O elastic scattering was given and the technique was demonstrated through experimental examples Si-SiO2 and quartz-CoGd layers.
Abstract: A simple theoretical background for the use of the 16o (α, α) 16O elastic scattering was given and the technique was demonstrated through experimental examples Si-SiO2 and quartz-CoGd layers. The method has advantages over other techniques in the analysis of layer structures with thin (native) oxide coverage, as it gives composition of the layer (backscattering) and the amount of the oxygen.
13 citations
9 citations
TL;DR: In this article, electron irradiation induced removal of post-implantation defects and introduction of simple electrically active defects was investigated in silicon samples implanted with phosphorus and boron ions and annealed at 350-500°C.
Abstract: Radiation annealing due to a 1.0 MeV election beam of intensity 25 μA/cm2 was studied in silicon samples implanted with phosphorus and boron ions and annealed at 350–500°C. A significant annealing enhancement as compared to thermal annealing has been observed in phosphorus-implanted samples. In boron-implanted samples, a fast initial rise of electrical activity is followed by a continuous decrease of carrier concentration. The results are interpreted in terms of two competing processes: electron irradiation induced removal of post-implantation defects and introduction of simple electrically active defects.
7 citations
6 citations