https://absimage.aps.org/image/MAR14/MWS_MAR14-2014-020819.pdf

Van der Waals heterostructures

Spintronic devices exploit the spin, as well as the charge, of electrons and could bring new capabilities to the microelectronics industry However, in order for spintronic devices to meet the ever-increasing demands of the industry, innovation in terms of materials, processes and circuits are required Here, we review recent developments in spintronics that could soon have an impact on the microelectronics and information technology industry We highlight and explore four key areas: magnetic memories, magnetic sensors, radio-frequency and microwave devices, and logic and non-Boolean devices We also discuss the challenges—at both the device and the system level—that need be addressed in order to integrate spintronic materials and functionalities into mainstream microelectronic platforms This Review Article examines the potential of spintronics in four key areas of application —memories, sensors, microwave devices, and logic devices — and discusses the challenges that need be addressed in order to integrate spintronic materials and functionalities into mainstream microelectronic platforms

Opportunities and challenges for spintronics in the microelectronics industry

Two-dimensional (2D) crystals offer a unique platform due to their remarkable and contrasting spintronic properties, such as weak spin-orbit coupling (SOC) in graphene and strong SOC in molybdenum disulfide (MoS2). Here we combine graphene and MoS2 in a van der Waals heterostructure (vdWh) to demonstrate the electric gate control of the spin current and spin lifetime at room temperature. By performing non-local spin valve and Hanle measurements, we unambiguously prove the gate tunability of the spin current and spin lifetime in graphene/MoS2 vdWhs at 300 K. This unprecedented control over the spin parameters by orders of magnitude stems from the gate tuning of the Schottky barrier at the MoS2/graphene interface and MoS2 channel conductivity leading to spin dephasing in high-SOC material. Our findings demonstrate an all-electrical spintronic device at room temperature with the creation, transport and control of the spin in 2D materials heterostructures, which can be key building blocks in future device architectures.

http://publications.lib.chalmers.se/records/fulltext/251098/local_251098.pdf

Electrical gate control of spin current in van der Waals heterostructures at room temperature.

2D materials are attractive for nanoelectronics due to their ultimate thickness dimension and unique physical properties A wide variety of emerging spintronic device concepts will greatly benefit from the use of 2D materials, leading a better way to manipulating spin In this review, we discuss various 2D materials, including graphene and other inorganic 2D semiconductors, in the context of scientific and technological advances in spintronic devices Applications of 2D materials in spin logic switches, spin valves, and spin transistors are specifically investigated We also introduce the spin-orbit and spin-valley coupled properties of 2D materials to explore their potential to address the crucial issues of contemporary electronics Finally, we highlight major challenges in integrating 2D materials into spintronic devices and provide a future perspective on 2D materials for spin logic devices

2D materials for spintronic devices

A transistor based on spin rather than charge—a spin transistor—could potentially offer non-volatile data storage and improved performance compared with traditional transistors. Many approaches have been explored to realize spin transistors, but their development remains a considerable challenge. The recent discovery of two-dimensional magnetic insulators such as chromium triiodide (CrI3), which offer electrically switchable magnetic order and an effective spin filtering effect, can provide new operating principles for spin transistors. Here, we report spin tunnel field-effect transistors (TFETs) based on dual-gated graphene/CrI3/graphene tunnel junctions. The devices exhibit an ambipolar behaviour and tunnel conductance that is dependent on the magnetic order in the CrI3 tunnel barrier. The gate voltage switches the tunnel barrier between interlayer antiferromagnetic and ferromagnetic states under a constant magnetic bias near the spin-flip transition, thus effectively and reversibly altering the device between a low and a high conductance state, with large hysteresis. By electrically controlling the magnetization configurations instead of the spin current, our spin TFETs achieve a high–low conductance ratio approaching 400%, suggesting they could be of value in the development of non-volatile memory applications. A tunnel field-effect transistor with spin-dependent outputs that are voltage controllable and reversible can be created using a dual-gated graphene/CrI3/graphene tunnel junction.

Spin tunnel field-effect transistors based on two-dimensional van der Waals heterostructures

Two quantum point contacts are used to respectively inject and detect spins by purely electrical means in an all-semiconductor spin transistor. The spin field-effect transistor envisioned by Datta and Das1 opens a gateway to spin information processing2,3. Although the coherent manipulation of electron spins in semiconductors is now possible4,5,6,7,8, the realization of a functional spin field-effect transistor for information processing has yet to be achieved, owing to several fundamental challenges such as the low spin-injection efficiency due to resistance mismatch9, spin relaxation and the spread of spin precession angles. Alternative spin transistor designs have therefore been proposed10,11, but these differ from the field-effect transistor concept and require the use of optical or magnetic elements, which pose difficulties for incorporation into integrated circuits. Here, we present an all-electric and all-semiconductor spin field-effect transistor in which these obstacles are overcome by using two quantum point contacts as spin injectors and detectors. Distinct engineering architectures of spin–orbit coupling are exploited for the quantum point contacts and the central semiconductor channel to achieve complete control of the electron spins (spin injection, manipulation and detection) in a purely electrical manner. Such a device is compatible with large-scale integration and holds promise for future spintronic devices for information processing.

/pdf/all-electric-all-semiconductor-spin-field-effect-transistors-4mcrz4dd2w.pdf

All-electric all-semiconductor spin field-effect transistors

The development of spintronics relies on the exploitation of techniques to control different spin species separately. Here the authors make use of spin orbit coupling to spatially separate two spin populations and control the subsequent coherent evolution.

/pdf/controlled-spatial-separation-of-spins-and-coherent-dynamics-1igebu04ec.pdf

Ju-Chun Fan

Papers

All-electric all-semiconductor spin field-effect transistors

Controlled spatial separation of spins and coherent dynamics in spin-orbit-coupled nanostructures