Metamorphic epitaxy offers the possibility of growing devices on wafers composed of different materials that might be larger than the native bulk substrates for a potential cost-reduction of III–V components; this is especially important when native substrates with desired lattice constants are not available. This article reviews the concepts of metamorphic epitaxy of III–V compound semiconductor materials and examines how they have been applied to the development of advanced transistor devices. These metamorphic devices are expected to be a key enabler of future heterogeneous integrated circuits in which Si and III–V devices are monolithically integrated on a wafer scale using complementary metal oxide semiconductor-like process flows.

https://www.cambridge.org/core/services/aop-cambridge-core/content/view/FC9973ECE58E0172EF57CBE05C30763F/S0883769416000270a.pdf/div-class-title-metamorphic-transistors-building-blocks-for-hetero-integrated-circuits-div.pdf

Metamorphic transistors: Building blocks for hetero-integrated circuits

Al2O3-passivated graded-barrier AlxGa1-xN/AlN/GaN/Si heterostructure field-effect transistor by hydrogen peroxide oxidization method

Comparative studies of double δ-doped InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistors (MOS-MHEMTs) with different compressive-strained and tensile-strained channel structures have been made. In addition to the strain engineering of the heterostructure, the MOS-gate design is also integrated by using the cost-effective H2O2 oxidization technique. The tensile (compressive)-strained channel is devised by the In0.52Al0.48As/In0.41Ga0.59As (In0.52Al0.48As/In0.63Ga0.37As) heterostructure. Device characteristics with respect to different channel structures are physically studied. The impact-ionizationrelated kink effects in MHEMTs are significantly suppressed by the MOS-gate. Atomic force microscopy (AFM) and low-frequency noise (LFN) analysis were used to study the surface roughness and interface quality. As compared to the compressive-strained MOSMHEMT and conventional Schottky-gate devices, the present tensile-strained MOS-MHEMT design has demonstrated improved transconductance gain (gm), current drive, intrinsic voltage gain (AV), and power performance. © The Author(s) 2014. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0031412jss] All rights reserved.

Juan Chen Yeh

Papers

Comparative Studies on InAlAs/InGaAs MOS-MHEMTs with Different Compressive/Tensile-Strained Channel Structures