Wei-Chou Hsu

TL;DR: In this paper, the authors compared the hydrogen sensing characteristics of Pd/GaN and Pd-Al 0.3Ga0.7As Schottky diodes over wide hydrogen concentration and temperature ranges.

TL;DR: In this paper, the impedance spectroscopy was used to investigate the interface of poly(4,8-bis-alkyloxybenzo(1,2-b:4,5-b′)dithiophene-2,6-diyl-alt- (alkyl thieno(3,4-b) thiophene 2-carboxylate) (PBDTTT-C):PC 70 BM in BHJ with DIO as additive.

TL;DR: In this article, a 13-nm-thick Al2O3 oxide was grown upon the surface of AlGaN barrier layer and served as the gate dielectric layer and the surface passivation layer at the same time to effectively decrease gate leakage current and prevent RF current current collapse, which are the critical issues of nitride HEMTs.

TL;DR: In this article, a time-multiplexing current balance (TMCB) current-mode boost converter is proposed to improve the transient performance of a conventional boost converter, which requires an extra inductor and a slight increase in the size of the printed circuit board layout and die size.

TL;DR: In this article, an oxide passivated AlGaN/GaN high electron mobility transistor by using the hydrogen peroxide (H2O2) treatment has been presented, which has demonstrated superior improvements of 41% in the maximum drain/source current density IDS,max; 39% in drain/ source saturation current density at zero gate bias IDSSO, 47% in maximum extrinsic transconductance gm,max, 53.2% in two-terminal gate/drain breakdown voltage BVGD 36% in cutoff frequency fT, and 20%