Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor are described. One exemplary aspect provides a power semiconductor device including a semiconductive substrate having a surface; and a power transistor having a planar configuration and comprising a plurality of electrically coupled sources and a plurality of electrically coupled drains formed using the semiconductive substrate and adjacent the surface.

Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor

High density static memory cells and arrays containing gated lateral bipolar transistors which can be latched in a bistable on state. Each transistor memory cell includes two gates which are pulse biased during the write operation to latch the cell. Also provided is a CMOS fabrication process to create the cells and arrays.

High density SRAM cell with latched vertical transistors

An electronic sensor (Figure 20) is provided for detecting the presence of one or more analytes of interest in a sample. The sensor preferably comprises a field effect transistor in which conductance is enhanced by analyte binding to receptors in the active region 280. An array of sensors may be formed to analyze a sample for multiple analytes.

Ultrasensitive biochemical sensor

PURPOSE:To obtain a high-density recording medium which provides a particularly high reproduced output by providing >=2 layers of magnetic layers, incorporating ferromagnetic hexagonal ferrite powder in the outermost magnetic layer and specifying the square ratio of the hexagonal ferrite layer in the vertical direction of the magnetic recording medium at a specific value of above. CONSTITUTION:A magnetic recording medium is formed by laminating and forming >=2 layers of magnetic layers contg. pulverized ferromagnetic powder and a binder as an essential component of a nonmagnetic substrate. A magnetic coating is coated on the substrate of such recording medium in such a way that the outermost magnetic layer contains hexagonal ferrite such as BaO.6Fe2O3 or the like and a binder as an essential component and that the square ratio thereof attains >=0.7 in the vertical direction of the magnetic recording medium. The substrate is thereafter passed between the magnets provided above and below the same to orient the magnetic layer before the coating dries. Co-contg. Fe2O3, CrO2, ferromagnetic alloy powder, etc. are used for the magnetic layer under said magnetic layer. The lower magnetic layer is provided as the magnetic flux from a head is hard to form a closed loop with only the hexagonal ferrite layer in the outermost part. The high-density recording medium which is improved in the reproduced output with a ring type head is thus obtd.

Magnetic recording medium

The invention aims at providing catalysts for the polymerization or copolymerization of α-olefins which exhibit high hydrogen response and high polymerization activity and can give polymers and copolymers of α-olefins having high stereoregularity and excellent melt flow characteristics; catalyst components of the catalysts; and processes for the polymerization of α-olefins with the catalysts. The invention relates to catalyst components of the catalyst for the polymerization or copolymerization of α-olefins which are represented by the general formula (37) or (38): Si(OR1)3(NR2R3) (37) (wherein R1 is hydrocarbyl having 1 to 6 carbon atoms; R2 is hydrocarbyl having 1 to 12 carbon atoms or hydrogen; and R3 is hydrocarbyl having 1 to 12 carbon atoms), and RNSi(OR1)3 (38) (wherein R1 is hydrocarbyl having 1 to 6 carbon atoms; and RN is cyclic amino).

CATALYSTS FOR POLYMERIZATION OR COPOLYMERIZATION OF a-OLEFINS, CATALYST COMPONENTS THEREOF, AND PROCESSES FOR POLYMERIZATION OF a-OLEFINS WITH THE CATALYSTS

A semiconductor switching device of field-drive type includes a bipolar component having a pnp transistor portion (8) and a npn transistor portion (9), said pnp transistor portion (8) and said npn transistor portion (9) being connected to cause a positive feedback, and a n-channel MOS transistor (11) connected across an emitter electrode (n3) and a collector electrode (n2) of said npn transistor portion (9), wherein a p-channel MOS transistor (10) is connected across an emitter electrode (p1) and a connector electrode (p2) of the pnp transistor portion (8), and a control terminal of said n-channel MOS transistor (11) is electrically connected with a control terminal of said p-channel MOS transistor (10). Said device is operable to control the main drive section even in the floating state and to drive the main drive section by a small control current.

Junjiro Kitano

Papers

Semiconductor switch circuit