J
Junkang Wang
Researcher at Université Paris-Saclay
Publications - 22
Citations - 133
Junkang Wang is an academic researcher from Université Paris-Saclay. The author has contributed to research in topics: Wafer & Chemistry. The author has an hindex of 6, co-authored 15 publications receiving 100 citations. Previous affiliations of Junkang Wang include Centre national de la recherche scientifique & École Polytechnique.
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Journal ArticleDOI
Anticrossing of axial and planar surface-related phonon modes in Raman spectra of self-assembled GaN nanowires
TL;DR: In this article, the surface character of these two modes is experimentally confirmed by their high sensitivity to the dielectric constant of the as-grown nanowires surrounding medium and suggest that these two peaks result from the anticrossing of axial and planar surface-related phonons.
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Experimental demonstration of multifrequency impedance matching for tailored voltage waveform plasmas
TL;DR: In this paper, the authors report on the design and demonstration of a simple, practical multifrequency matchbox (MFMB) based on a network of LC resonant circuits, and quantified in terms of a range of matchable impedances (when matching a single frequency at a time), as well as for the independence of each match to changes at adjacent harmonics.
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Effect of Ion Energy on Microcrystalline Silicon Material and Devices: A Study Using Tailored Voltage Waveforms
Bastien Bruneau,Michael Lepecq,Junkang Wang,Jean-Christophe Dornstetter,Jean-Luc Maurice,Erik Johnson +5 more
TL;DR: In this paper, the authors used tailored voltage waveforms to excite a plasma to decouple maximum ion energy from the ion flux on the electrode, and found that at critical energies (30 and 70 eV), a stepwise increase in the a-Si:H/μc-Si-H transition thickness is observed, together with change in the surface morphology.
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Stress distribution of 12 μm thick crack free continuous GaN on patterned Si(110) substrate
Tasnia Hossain,Tasnia Hossain,Junkang Wang,Eric Frayssinet,Sébastien Chenot,Mathieu Leroux,Benjamin Damilano,F. Demangeot,F. Demangeot,Lise Durand,Lise Durand,Anne Ponchet,M. J. Rashid,M. J. Rashid,Fabrice Semond,Yvon Cordier +15 more
TL;DR: In this article, the µRaman shift of the GaN E2 mode shows the U-shape inplane stress distribution across the mesa, where the center of the mesh is under tensile stress and it relaxes near the corner and edges.
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Photoluminescence spectrum from heterojunction with intrinsic thin layer solar cells: An efficient tool for estimating wafer surface defects
A. Datta,Mun-Ho Song,Junkang Wang,M. Labrune,M. Labrune,S. Chakroborty,P. Roca i Cabarrocas,P. Chatterjee +7 more
TL;DR: In this paper, electrical-optical modeling of the measured PL signal from these wafers (in a solar cell configuration) is used to quantify the surface defects in each case, relative to e.g., the sample showing the highest PL signal, and link them to the solar cell output parameters and the defect density on the wafer surface.