K
K. Vörtler
Researcher at University of Helsinki
Publications - 18
Citations - 498
K. Vörtler is an academic researcher from University of Helsinki. The author has contributed to research in topics: Sputtering & Deuterium. The author has an hindex of 12, co-authored 18 publications receiving 456 citations.
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Journal ArticleDOI
Interatomic potentials for the Be-C-H system.
Carolina Björkas,N. Juslin,Helga Timko,K. Vörtler,Kai Nordlund,K.O.E. Henriksson,Paul Erhart +6 more
TL;DR: Analytical bond-order potentials for beryllium, beryLLium carbide and bryllium hydride are presented and the reactive nature of the formalism makes the potentials suitable for simulations of non-equilibrium processes such as plasma-wall interactions in fusion reactors.
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Chemical sputtering of Be due to D bombardment
TL;DR: In this paper, the erosion of Be when subject to D bombardment was measured at the PISCES-B facility and modelled with molecular dynamics simulations, and a chemical effect was observed, since a fraction of the eroded Be was in the form of BeD molecules.
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Simulation of irradiation induced deuterium trapping in tungsten
TL;DR: In this article, the evolution of defects, hydrogen, and impurities in tungsten during and after deuterium irradiation is simulated by solving rate theory equations, and the results are in excellent agreement with irradiation experiments, and they conclude that formed impurity self-interstitial atom complexes could be the nucleation site for formation of large interstitial type dislocation loops observed experimentally.
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The effect of prolonged irradiation on defect production and ordering in Fe-Cr and Fe-Ni alloys.
TL;DR: The modification of the repulsive part of the Fe-Ni interaction potential, which was needed to study the non-equilibrium processes, was reported.
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Sticking of atomic hydrogen on the tungsten (0 0 1) surface
TL;DR: In this paper, the sticking of hydrogen atoms with kinetic energies in the range 0.003-10 eV on a clean (001) tungsten surface has been investigated using molecular dynamics simulations.