K
Kai-Xin Ren
Researcher at Jilin University
Publications - 16
Citations - 121
Kai-Xin Ren is an academic researcher from Jilin University. The author has contributed to research in topics: Chemistry & Monolayer. The author has an hindex of 1, co-authored 1 publications receiving 6 citations.
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Tuning electronic, magnetic and catalytic behaviors of biphenylene network by atomic doping
TL;DR: In this article , a two-dimensional allotrope of carbon named biphenylene has been experimentally synthesized and first-principles calculations are preformed to investigate the electronic properties of biphenylon and the doping effect is also considered to tune its electronic, magnetic, and catalytic properties.
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A Family of Li B Monolayers with a Wide Spectrum of Potential Applications
TL;DR: In this paper , a series of kinetically and thermodynamically stable LixBy monolayers were predicted using first-principles calculations and evolutionary structure search, and they were found to be isotropic, anisotropic, and auxetic.
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Stacking-Mediated Type-I/Type-II Transition in Two-Dimensional MoTe2/PtS2 Heterostructure: A First-Principles Simulation
TL;DR: In this paper , the MoTe2/PtS2 van der Waals heterostructure (vdWH) is constructed with different stacking structures based on density functional calculations, and the stacking-dependent electronic characteristic is explored.
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Phonon properties of biphenylene monolayer by first-principles calculations
TL;DR: In this paper , the properties of optical and acoustic phonons in monolayer biphenylene were investigated, combining the first-principles calculations and theoretical analysis, and it was shown that the inconsistent speed of motion and different intensities of hybridization between these inequivalent carbon atoms should take responsibility for the direction dependent thermal and elastic properties in biphenylon.
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Prediction of 2D IV-VI semiconductors: auxetic materials with direct bandgap and strong optical absorption.
TL;DR: In this article, a new class of monolayer IV-VI semiconductors, namely, δ-IV-VI monolayers (GeS, GeSe, SiS and SiSe), were predicted.