https://cyberleninka.org/article/n/247805.pdf

A brief review of atomic layer deposition: from fundamentals to applications

Atomic layer deposition-Sequential self-limiting surface reactions for advanced catalyst "bottom-up" synthesis

Recent progress in surface modification of metals coated by plasma electrolytic oxidation: Principle, structure, and performance

A showerhead including a body having an opening, a first plate positioned within the opening and having a plurality of slots, a second plate positioned within the opening and having a plurality of slots, and wherein each of the first plate plurality of slots are concentrically aligned with the second plate plurality of slots.

Semiconductor reaction chamber showerhead

A gas inlet system for a wafer processing reactor includes a tubular gas manifold conduit adapted to be connected to a gas inlet port of the wafer processing reactor; and gas feeds including a first feed for feeding a first gas into the tubular gas manifold conduit and a second feed for feeding a second gas into the tubular gas manifold conduit. Each feed has two or more injection ports connected to the tubular gas manifold conduit at a first axial position of the tubular gas manifold conduit, and the injection ports of each of the gas feeds are evenly distributed along a circumference of the tubular gas manifold conduit at the first axial position.

Gas Supply Manifold And Method Of Supplying Gases To Chamber Using Same

Precursors and chemistry for the atomic layer deposition of metallic first row transition metal films

A compound that is useful for forming a metal by reaction with a reducing agent is described by formula (I): 
wherein
 M is a metal selected from Groups 2 through 12 of the Periodic Table; and R 1 , R 2 , R 3 , and R 4 are each independently H or C 1 -C 8 alkyl.

Synthesis and characterization of first row transition metal complexes containing α-imino alkoxides as precursors for deposition of metal films

Provided are methods for depositing flowable films comprising SiO or SiN. Certain methods comprise exposing a substrate surface to a siloxane or silazane precursor; exposing the substrate surface to a plasma-activated co-reactant to provide a SiON intermediate film; UV curing the SiON intermediate film to provide a cured intermediate film; and annealing the cured intermediate film to provide a film comprising SiO or SiN.

METHODS OF DEPOSITING FLOWABLE FILMS COMPRISING SiO and SiN

Treatment of MCl2 (M = Cu, Ni, Co, Fe, Mn, Cr) with 2 equiv of α-imino alkoxide salts K(RR′COCNtBu) (R = Me, tBu; R′ = iPr, tBu) afforded M(RR′COCNtBu)2 or [Mn(RR′COCNtBu)2]2 in 9–75% yields. These complexes combine volatility and high thermal stability and have useful atomic layer deposition (ALD) precursor properties. Solution reactions between Ni, Co, and Mn complexes showed that BH3(NHMe2) can reduce all to metal powders. ALD growth of Ni, Co, Fe, and Cr films is demonstrated. Mn film growth may be possible, but the films oxidize completely upon exposure to air.

Volatile and thermally stable mid to late transition metal complexes containing α-imino alkoxide ligands, a new strongly reducing coreagent, and thermal atomic layer deposition of Ni, Co, Fe, and Cr metal films.

Methods for seam-less gapfill comprising forming a flowable film by exposing a substrate surface to a silicon-containing precursor and a co-reactant are described. The silicon-containing precursor has at least one akenyl or alkynyl group. The flowable film can be cured by any suitable curing process to form a seam-less gapfill.

Kalutarage Lakmal C

Papers

Precursors and chemistry for the atomic layer deposition of metallic first row transition metal films

Synthesis and characterization of first row transition metal complexes containing α-imino alkoxides as precursors for deposition of metal films

METHODS OF DEPOSITING FLOWABLE FILMS COMPRISING SiO and SiN

Volatile and thermally stable mid to late transition metal complexes containing α-imino alkoxide ligands, a new strongly reducing coreagent, and thermal atomic layer deposition of Ni, Co, Fe, and Cr metal films.

Deposition Of Flowable Silicon-Containing Films