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Kamalesh Hatua

Researcher at Indian Institute of Technology Madras

Publications -  106
Citations -  1933

Kamalesh Hatua is an academic researcher from Indian Institute of Technology Madras. The author has contributed to research in topics: Insulated-gate bipolar transistor & Gate driver. The author has an hindex of 21, co-authored 82 publications receiving 1516 citations. Previous affiliations of Kamalesh Hatua include Indian Institute of Science & North Carolina State University.

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Proceedings ArticleDOI

Closed loop analog active gate driver for fast switching and active damping of SiC MOSFET

TL;DR: Proposed gate driver allows the device to operate at desired di/dt as well as dv/dt level, even under moderate layout parasitic, and tries to exploit certain benefits offered by the layout parasitic to further reduce the switching losses.
Proceedings ArticleDOI

A comparative study of three-phase dual active bridge topologies and their suitability for D-Q mode control

TL;DR: In this paper, a comparative evaluation of three different three-phase Dual Active Bridge (DAB) topologies with a 15-kV Si-IGBT based three-level converter at the high-voltage side and a 1200-V SiC-MOSFET based converters in three different arrangements at the low voltage side are compared.
Proceedings ArticleDOI

Current controlled active gate driver for 1200V SiC MOSFET

TL;DR: In this article, a new current controlled active gate driver mechanism is proposed to drive a SiC MOSFET, which can be realized with cheaper electronic components with sufficient bandwidth.
Proceedings ArticleDOI

An improved scheme for extended power loss ride-through in a voltage source inverter fed vector controlled induction motor drive using a loss minimisation technique

TL;DR: In this article, a front-end diode bridge rectifier is used to extend the duration of the ride-through in voltage-source-inverter-fed vector-controlled induction motor drives.
Proceedings ArticleDOI

Gate driver design considerations for silicon carbide MOSFETs including series connected devices

TL;DR: In this paper, the design considerations of gate driver for silicon carbide (SiC) power devices are discussed, focusing on minimizing the commonmode current injection into the control circuit, thereby adapting the gate circuit to operate at higher dv/dt of fast switching transients.