There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

The ability to tune material properties using gating by electric fields is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensional systems, such as the observation of gate electric-field-induced superconductivity and metal-insulator transitions. Here, we describe an ionic field-effect transistor (termed an iFET), in which gate-controlled Li ion intercalation modulates the material properties of layered crystals of 1T-TaS2. The strong charge doping induced by the tunable ion intercalation alters the energetics of various charge-ordered states in 1T-TaS2 and produces a series of phase transitions in thin-flake samples with reduced dimensionality. We find that the charge-density wave states in 1T-TaS2 collapse in the two-dimensional limit at critical thicknesses. Meanwhile, at low temperatures, the ionic gating induces multiple phase transitions from Mott-insulator to metal in 1T-TaS2 thin flakes, with five orders of magnitude modulation in resistance, and superconductivity emerges in a textured charge-density wave state induced by ionic gating. Our method of gate-controlled intercalation opens up possibilities in searching for novel states of matter in the extreme charge-carrier-concentration limit.

http://absimage.aps.org/image/MAR15/MWS_MAR15-2014-020259.pdf

Gate-tunable phase transitions in thin flakes of 1T-TaS$_{2}$

We study the renormalization group flow of the Lagrangian for statistical and quantum systems by representing their path integral in terms of a tensor network. Using a tensor-entanglement-filtering renormalization approach that removes local entanglement and produces a coarse-grained lattice, we show that the resulting renormalization flow of the tensors in the tensor network has a nice fixed-point structure. The isolated fixedpoint tensors Tinv plus the symmetry group Gsym of the tensors i.e., the symmetry group of the Lagrangian characterize various phases of the system. Such a characterization can describe both the symmetry breaking phases and topological phases, as illustrated by two-dimensional 2D statistical Ising model, 2D statistical loop-gas model, and 1+1D quantum spin-1/2 and spin-1 models. In particular, using such a Gsym,Tinv characterization, we show that the Haldane phase for a spin-1 chain is a phase protected by the time-reversal, parity, and translation symmetries. Thus the Haldane phase is a symmetry-protected topological phase. The Gsym,Tinv characterization is more general than the characterizations based on the boundary spins and string order parameters. The tensor renormalization approach also allows us to study continuous phase transitions between symmetry breaking phases and/or topological phases. The scaling dimensions and the central charges for the critical points that describe those continuous phase transitions can be calculated from the fixed-point tensors at those critical points.

Tensor-entanglement-filtering renormalization approach and symmetry-protected topological order

Hydrogen atom makes graphene magnetic Graphene has many extraordinary mechanical and electronic properties, but it's not magnetic. To make it so, the simplest strategy is to modify its electronic structure to create unpaired electrons. Researchers can do that by, for example, removing individual carbon atoms or adsorbing hydrogen onto graphene. This has to be done in a very controlled way because of a peculiarity of the graphene's crystal lattice, which consists of two sublattices. Gonzales-Herrero et al. deposited a single hydrogen atom on top of graphene and used scanning tunneling microscopy to detect magnetism on the sublattice lacking the deposited atom (see the Perspective by Hollen and Gupta). Science, this issue p. 437; see also p. 415 Scanning tunneling microscopy shows that a hydrogen atom deposited on graphene makes the complementary sublattice magnetic. [Also see Perspective by Hollen and Gupta] Isolated hydrogen atoms absorbed on graphene are predicted to induce magnetic moments. Here we demonstrate that the adsorption of a single hydrogen atom on graphene induces a magnetic moment characterized by a ~20–millielectron volt spin-split state at the Fermi energy. Our scanning tunneling microscopy (STM) experiments, complemented by first-principles calculations, show that such a spin-polarized state is essentially localized on the carbon sublattice opposite to the one where the hydrogen atom is chemisorbed. This atomically modulated spin texture, which extends several nanometers away from the hydrogen atom, drives the direct coupling between the magnetic moments at unusually long distances. By using the STM tip to manipulate hydrogen atoms with atomic precision, it is possible to tailor the magnetism of selected graphene regions.

/pdf/atomic-scale-control-of-graphene-magnetism-by-using-hydrogen-53d9rq6gri.pdf

Atomic-scale control of graphene magnetism by using hydrogen atoms

Graphene nanoflakes in external electric and magnetic in-plane fields

The effect of the solar eclipse on the air temperature near the ground

The influence of interplanar coupling on the entropy and specific heat of the bilayer ferromagnet

The electronic structure of $1T\ensuremath{-}\mathrm{Ta}{\mathrm{S}}_{2}$ showing a metal-insulator transition and a sequence of different charge density wave (CDW) transformations was discussed in the frame of variable temperature angle-resolved photoelectron spectroscopy (ARPES), scanning tunneling spectroscopy (STS), and density functional theory (DFT) calculations. For the commensurate charge density wave phase (CCDW) the Mott gap was estimated to be 0.4 eV and energy gaps ${\mathrm{\ensuremath{\Delta}}}_{\text{CCDW},1},\phantom{\rule{0.16em}{0ex}}{\mathrm{\ensuremath{\Delta}}}_{\text{CCDW},2},\phantom{\rule{0.16em}{0ex}}{\mathrm{\ensuremath{\Delta}}}_{B3\ensuremath{-}\mathit{HHB}},\phantom{\rule{0.16em}{0ex}}{\mathrm{\ensuremath{\Delta}}}_{B4\ensuremath{-}B3}$ were observed. For the nearly commensurate charge density wave phase (NCCDW), the reminiscent of higher and lower Hubbard bands and a very pronounced electronic state associated with the parabolic band at the $\overline{\mathrm{\ensuremath{\Gamma}}}$ point in the Brillouin zone were identified. The incommensurate charge density wave phase (ICCDW) showed a high value of local density of states at the Fermi level and a very pronounced edge of the metallic surface state located in the range of 0.15--0.20 eV above the Fermi level. The obtained STS and ARPES results were consistent with our theoretical calculations performed within DFT formalism including spin-orbit coupling.

Electronic structure of commensurate, nearly commensurate, and incommensurate phases of 1 T -Ta S 2 by angle-resolved photoelectron spectroscopy, scanning tunneling spectroscopy, and density functional theory

We calculate the indirect charge carrier mediated Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between magnetic impurities for two selected graphene nanoflakes containing four hexagonal rings in their structure, differing by their geometry. We describe the electronic structure of either charge-neutral or doped nanoflakes using the tight-binding approximation with the Hubbard term, which is treated within the molecular-field approximation. We find pronounced differences in the RKKY coupling energies, dependent on the placement of the pair of magnetic moments in the nanostructure and on the edge form. For an odd total number of electrons in the structure, we predict in some circumstances the existence of ferromagnetic coupling with leading first-order perturbational contribution, while for an even number of charge carriers the usual, second-order mechanism dominates. Therefore, doping of the nanoflake with a single charge carrier is found to be able to change the coupling from an antiferromagnetic to a ferromagnetic one for some geometries.

Karol Szałowski

Papers

Graphene nanoflakes in external electric and magnetic in-plane fields

The effect of the solar eclipse on the air temperature near the ground

The influence of interplanar coupling on the entropy and specific heat of the bilayer ferromagnet

Electronic structure of commensurate, nearly commensurate, and incommensurate phases of 1 T -Ta S 2 by angle-resolved photoelectron spectroscopy, scanning tunneling spectroscopy, and density functional theory

RKKY coupling between impurity spins in graphene nanoflakes