Kars Zeger Troost

TL;DR: In this paper, a method and a device for performing gray scale exposure for applying a different radiation dose for each region on a substrate so that a plurality of kinds of substrates can be treated after one exposure in lithography using a separately controllable element as a patterning means for patterning projection beams.

TL;DR: An overview of the key technology innovations and infrastructure requirements for the next generation EUV systems is presented and a novel, anamorphic lens design is developed to provide the required Numerical Aperture.

TL;DR: In this article, the authors report on the system design of an optical Maskless Scanner in development by ASML and Micronic: small-field optics with high demagnification, variable NA and illumination schemes, spatial light modulators with millions of MEMS mirrors on CMOS drivers, a data path with a sustained data flow of more than 250 GPixels per second, stitching of sub-fields to scanner fields, and rasterization and writing strategies for throughput and good image fidelity.

TL;DR: A novel lens design, capable of providing the required NA, has been identified; this lens will be paired with new, faster stages and more accurate sensors enabling the tight focus and overlay control needed for future process nodes.

TL;DR: It is shown that High-NA EUV delivers increased resolution and contrast, thereby supporting EPE requirements of future nodes and can benefit the imaging performance of via- and cutmask-layers by blocking the zeroth order light from the pupil, enhancing image contrast.