K
Kashinath A. Bogle
Researcher at Swami Ramanand Teerth Marathwada University
Publications - 79
Citations - 1136
Kashinath A. Bogle is an academic researcher from Swami Ramanand Teerth Marathwada University. The author has contributed to research in topics: Thin film & Chemistry. The author has an hindex of 13, co-authored 59 publications receiving 897 citations. Previous affiliations of Kashinath A. Bogle include University of New South Wales & Indian Association for the Cultivation of Science.
Papers
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Silver nanoparticles: synthesis and size control by electron irradiation
TL;DR: In this paper, the electron-irradiated solutions and the thin coatings cast from them were characterized using the ultraviolet-visible (UV-vis), x-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques.
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TiO2–Au plasmonic nanocomposite for enhanced dye-sensitized solar cell (DSSC) performance
Subas Muduli,Onkar Game,Vivek Dhas,K. Vijayamohanan,Kashinath A. Bogle,Nagarajan Valanoor,Satishchandra Ogale +6 more
TL;DR: Anatase TiO2 nanoparticles dressed with gold nanoparticles were synthesized by hydrothermal process by using mixed precursor and controlled conditions Diffused Reflectance Spectra (DRS) reveal that in addition to the expectedTiO2 interband absorption below 360nm gold surface plasmon feature occurs near 564nm as mentioned in this paper.
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Scaling Behavior of Resistive Switching in Epitaxial Bismuth Ferrite Heterostructures
Abhimanyu Rana,Abhimanyu Rana,Haidong Lu,Kashinath A. Bogle,Qi Zhang,Rama K. Vasudevan,Vishal Thakare,Alexei Gruverman,Satishchandra Ogale,Nagarajan Valanoor +9 more
TL;DR: In this paper, the authors investigated resistive switching in epitaxial multiferroic BiFeO3/La0.67Sr0.33MnO3 /SrTiO3 heterostructures for varying lengths scales in both the thickness and lateral directions.
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Enhanced nonvolatile resistive switching in dilutely cobalt doped TiO2
TL;DR: In this article, the authors demonstrate that enhanced nonvolatile resistive switching is realized in dilutely cobalt doped TiO2 films grown at room temperature, and suggest that the oxygen vacancies in the proximity of immobile dopants provide well distributed anchors for the development of systematic filamentary tracks.
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Interface mediated resistive switching in epitaxial NiO nanostructures
TL;DR: In this article, the authors report on the nonvolatile resistive switching properties of epitaxial nickel oxide (NiO) nanostructures, 10-100nm wide and up to 30nm high grown on (001)-Nb:SrTiO3 substrates.