H
Haidong Lu
Researcher at University of Nebraska–Lincoln
Publications - 74
Citations - 5003
Haidong Lu is an academic researcher from University of Nebraska–Lincoln. The author has contributed to research in topics: Ferroelectricity & Piezoresponse force microscopy. The author has an hindex of 28, co-authored 74 publications receiving 3703 citations. Previous affiliations of Haidong Lu include Nanjing University & North Carolina State University.
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Journal ArticleDOI
Mechanical Writing of Ferroelectric Polarization
Haidong Lu,Chung Wung Bark,D. Esqué-de los Ojos,Jorge Alcalá,Chang-Beom Eom,Gustau Catalan,Alexei Gruverman +6 more
TL;DR: It is demonstrated that the stress gradient generated by the tip of an atomic force microscope can mechanically switch the polarization in the nanoscale volume of a ferroelectric film, enabling applications in which memory bits are written mechanically and read electrically.
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Elastic properties of 2D Ti3C2Tx MXene monolayers and bilayers
Alexey Lipatov,Haidong Lu,Mohamed Alhabeb,Babak Anasori,Alexei Gruverman,Yury Gogotsi,Alexander Sinitskii +6 more
TL;DR: This work opened a pathway for investigating the mechanical properties of monolayers and bilayers of other MXenes and extends the already broad range of MXenes’ applications to structural composites, protective coatings, nanoresonators, and membranes that require materials with exceptional mechanical properties.
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Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale.
Alexei Gruverman,Dong Wu,Haidong Lu,Yong Wang,Ho Won Jang,C. M. Folkman,M. Ye. Zhuravlev,D. A. Felker,Mark Rzchowski,Chang-Beom Eom,Evgeny Y. Tsymbal +10 more
TL;DR: The obtained results show a change in resistance by about 2 orders of magnitude upon polarization reversal on a lateral scale of 20 nm at room temperature, promising for employing ferroelectric tunnel junctions in nonvolatile memory and logic devices.
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Ferroelectric tunnel memristor.
Dong Jik Kim,Haidong Lu,Sangwoo Ryu,Chung Wung Bark,Chang-Beom Eom,Evgeny Y. Tsymbal,Alexei Gruverman +6 more
TL;DR: A new type of memristor that is based on a ferroelectric tunnel junction, where the tunneling conductance can be tuned in an analogous manner by several orders of magnitude by both the amplitude and the duration of the applied voltage is demonstrated.
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Electric‐Field‐Driven Reversible Conversion Between Methylammonium Lead Triiodide Perovskites and Lead Iodide at Elevated Temperatures
TL;DR: In this article, the authors present a direct evidence for the macroscopic migration of V I • in MAPbI 3 perovskite devices at an elevated temperature of 330 K.