K
Katsutoshi Izumi
Researcher at Nippon Telegraph and Telephone
Publications - 56
Citations - 1364
Katsutoshi Izumi is an academic researcher from Nippon Telegraph and Telephone. The author has contributed to research in topics: Silicon & Layer (electronics). The author has an hindex of 16, co-authored 56 publications receiving 1362 citations.
Papers
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Journal ArticleDOI
C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon
TL;DR: In this paper, the impurity distribution of the oxygen-implanted silicon substrate was analyzed by auger spectroscopy, and the epitaxially-grown silicon layer on this substrate showed a good monocrystalline structure and a 19-stage c.m.o.s. ring oscillator exhibited high performance in operation.
Journal ArticleDOI
Analysis of buried oxide layer formation and mechanism of threading dislocation generation in the substoichiometric oxygen dose region
Sadao Nakashima,Katsutoshi Izumi +1 more
TL;DR: In this article, a threading dislocation mechanism was proposed for SIMOX wafers implanted at 180 keV with doses of 0.35 × 1018-0.4 × 6.7 cm−2.
Journal ArticleDOI
0.1- mu m-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layer
TL;DR: In this paper, a 0.1- mu m-gate CMOS/SIMOX (separation by implanted oxygen) has been successfully fabricated using high quality SIMOX substrates and an advanced design concept for the subquarter-micron region based on a simple device model.
Patent
SOI substrate and method of producing the same
TL;DR: In this article, a method of producing an SOI substrate having a single-crystal silicon layer on a buried oxide layer in an electrically insulating state from the substrate by implanting oxygen ions into a single crystal silicon substrate was proposed.
Journal ArticleDOI
Investigations on High‐Temperature Thermal Oxidation Process at Top and Bottom Interfaces of Top Silicon of SIMOX Wafers
Sadao Nakashima,T. Katayama,Yoshiji Miyamura,A. Matsuzaki,M. Kataoka,D. Ebi,Masato Imai,Katsutoshi Izumi,Norihiko Ohwada +8 more
TL;DR: In this article, the structure of separation by implanted oxygen (SIMOX) wafers oxidized at temperatures from 1000 to 1350°C has been investigated using cross-sectional transmission electron microscopy and spectroscopic ellipsometry.