K
Kazuaki Sawada
Researcher at Toyohashi University of Technology
Publications - 462
Citations - 4692
Kazuaki Sawada is an academic researcher from Toyohashi University of Technology. The author has contributed to research in topics: Image sensor & Silicon. The author has an hindex of 34, co-authored 461 publications receiving 4432 citations. Previous affiliations of Kazuaki Sawada include Horiba & Toshiba.
Papers
More filters
Journal ArticleDOI
Fabrication of a two-dimensional pH image sensor using a charge transfer technique
TL;DR: In this paper, a pH image sensor is presented, which is capable of measuring two-dimensional (2D) distributions and dynamic images of various chemical reactions in real-time.
Journal ArticleDOI
Development of amperometric glucose biosensor based on glucose oxidase co-immobilized with multi-walled carbon nanotubes at low potential
TL;DR: In this article, the electrodes modified with multi-walled carbon nanotube (MWCNT) film containing adsorbed glucose oxidase (GOx) with respect to highly sensitive glucose detection are developed and demonstrated by electrochemical studies at low potential.
Journal ArticleDOI
Highly sensitive ion sensors using charge transfer technique
TL;DR: In this paper, an expected high sensitive ion sensor is proposed and prototype one is fabricated using a charge coupled device (CCD) process, which is operated in a signal integration mode.
Journal ArticleDOI
A MEMS microvalve with PDMS diaphragm and two-chamber configuration of thermo-pneumatic actuator for integrated blood test system on silicon
TL;DR: In this paper, a thermo-pneumatic in-channel microvalve applicable to integrated blood test system is presented, where polydimethylsiloxane (PDMS) is employed as the diaphragm material for a long stroke actuation in micro-valve operation and high sealing performance.
Patent
FET type sensor, ion density detecting method comprising this sensor, and base sequence detecting method
TL;DR: The surface of a semiconductor substrate comprises an input diode section and a floating diffusion section (3) consisting of a diffusion region reverse to the substrate in conductivity type, an input gate (6 ) and an output gate (7 ) fixed on an insulation film (5 ) extending from an input dode section to the floating diffusion sections, a sensing section (9 ) consisting of an ion sensitive film fixed on the insulation film extending from the input as mentioned in this paper.