An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

In this paper, on-body propagation modelling has been investigated applying various numerical computational techniques. Propagation measurements with body-worn antennas have been carried out at 2.4 GHz inside and outside an anechoic chamber respectively for narrowband communication channel characterisation. Both simulation and measurement results have been also obtained at the UWB (ultra wide-band) band.

Antennas And Propagation for Body-Centric Wireless Communications

Before the emergence of ultra-wideband (UWB) radios, widely used wireless communications were based on sinusoidal carriers, and impulse technologies were employed only in specific applications (e.g. radar). In 2002, the Federal Communication Commission (FCC) allowed unlicensed operation between 3.1–10.6 GHz for UWB communication, using a wideband signal format with a low EIRP level (−41.3dBm/MHz). UWB communication systems then emerged as an alternative to narrowband systems and significant effort in this area has been invested at the regulatory, commercial, and research levels.

IEEE Transactions on Microwave Theory and Techniques and Antennas and Propagation Announce a Joint Special Issue on Ultra-Wideband (UWB) Technology

Preface. 1. Introduction. 2. Optical Fiber. 3. Photodetectors. 4. Receiver Fundamentals. 5. Transimpledance Amplifiers. 6. Main Amplifiers. 7. Optical Transmitters. 8. Laser and Modulator Drivers. Appendix A: Eye Diagrams. Appendix B: Differential Circuits. Appendix C: S Parameters. Appendix D: Transistors and Technologies. Appendix E: Answers to the Problems. Appendix F: Notation. Appendix G: Symbols. Appendix H: Acronyms. References. Index.

Broadband Circuits for Optical Fiber Communication

A method of fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12), forming on the surface (12) of the silicon substrate (10), by atomic layer deposition (ALD), a seed layer (20;20') characterised by a silicate material and forming, by atomic layer deposition (ALD) one or more layers of a high dielectric constant oxide (40) on the seed layer (20;20').

Method for fabricating a semiconductor structure including a metal oxide interface with silicon

The emitter size effect for fully self-aligned AlGaAs-GaAs heterojunction bipolar transistors (HBTs) with depleted AlGaAs passivation layers, in which the partially thinned AlGaAs emitter is self-aligned by using the dual sidewall process, is investigated. It is demonstrated that drastic improvement in the emitter size effect can be achieved with an AlGaAs passivation layer as small as 0.2 mu m in width, due to the surface recombination current reduction by a factor of 1/40 in the extrinsic base region. It has also been found that the base current is dominated by excess leakage current in the proton-implanted isolation region. >

Emitter size effect on current gain in fully self-aligned AlGaAs/GaAs HBT's with AlGaAs surface passivation layer

A negative group delay (NGD) circuit has been employed to equalize a group delay variation in a broadband ultra-wideband (UWB) InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) amplifier. Using the NGD circuit, a part of a salient group delay characteristic in the operation band of broadband amplifiers can be suppressed without an increase of the entire group delay. The MMIC amplifier has a steep group delay increase in the lower frequency region of the full-band UWB band (3.1-10.6 GHz) due to the sum of phase variations near the cutoff frequencies of the HBTs. The NGD circuit has been inserted to reduce this increase of the group delay in the UWB band. By adding a three-cell NGD circuit while considering input and output matching at the input side of the MMIC amplifier, the group delay variation is decreased by 78%. However, gain was also decreased by insertion of the multistage NGD circuit. In an attempt to avoid this decrease in gain, a one-cell NGD circuit was inserted into the feedback loop of the MMIC amplifier, and as a result, we were able to decrease the group delay variation by 79%, with minimal gain deterioration.

Group Delay Equalized UWB InGaP/GaAs HBT MMIC Amplifier Using Negative Group Delay Circuits

On a main plane of a semi-insulation GaAs substrate, a microwave.millimeter wave active circuit is provided, and, on a back surface thereof, a microstrip antenna is provided. On the other hand, a signal processing circuit of a large integration scale is provided on a main plane of a silicon substrate. The microwave.millimeter wave transmitting and receiving module is composed of the semi-insulation GaAs substrate and the silicon substrate which are in contact on the main planes with each other.

Microwave . millimeter wave transmitting and receiving module

A class-F amplifier circuit by which the transistor load impedance, for even-order higher harmonics, can be kept “zero” and that for odd-order higher harmonics can be kept “open” without affecting the impedance at the fundamental frequency has been developed. This circuit basically consists of transmission lines with lengths equal to a half wavelength and a quarter wavelength at the fundamental frequency where the residual reactance at the fundamental frequency, due to the higher harmonic-frequency circuits, is compensated. Using this circuit, a microwave heterojunction bipolar transistor amplifier was designed using a harmonic-balance simulator. The designed power-added efficiency was more than 90%. The output waveforms, a dynamic load line, and the input/output power response were evaluated.

A simple circuit synthesis method for microwave class-F ultra-high-efficiency amplifiers with reactance-compensation circuits

The present paper describes a new approach to fabricating high performance HBT's with low base resistance. Their base contact resistance is reduced by using MOMBE selective growth in the extrinsic base region-a key process in the fabrication of high-f/sub max/ AlGaAs/InGaAs and AlGaAs/GaAs HBT's. A p/sup +//p regrown base structure, which consists of a 40-nm-thick graded InGaAs strained layer and a heavily C-doped regrown contact layer, is used for the AlGaAs/InGaAs HBT's to reduce both their base transit time and base resistance, while preventing aluminum oxide incorporation at the regrowth interface. An h/sub fe/ of 93, an f/sub T/ of 102 GHz, and an f/sub max/ of 224 GHz are achieved for a 1.6-/spl mu/m/spl times/4.6-/spl mu/m HBT, together with reduced base push-out effects and improved reliability. AlGaAs/GaAs HBT's with an 80-nm-thick uniform base layer that have high f/sub max/ values ranging from 140-216 GHz are also fabricated using the selective growth technique. These results confirm the high potential of the proposed HBT's, especially for microwave and millimeter-wave applications. >

Kazuhiko Honjo

Papers

Emitter size effect on current gain in fully self-aligned AlGaAs/GaAs HBT's with AlGaAs surface passivation layer

Group Delay Equalized UWB InGaP/GaAs HBT MMIC Amplifier Using Negative Group Delay Circuits

Microwave . millimeter wave transmitting and receiving module

A simple circuit synthesis method for microwave class-F ultra-high-efficiency amplifiers with reactance-compensation circuits

High-f/sub max/ AlGaAs/InGaAs and AlGaAs/GaAs HBT's with p/sup +//p regrown base contacts