The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers, including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a non-conductive distributed bragg reflector coupled to the plurality of semiconductor layers, reflecting the light from the active layer; and a first light-transmitting film coupled to the distributed bragg reflector from a side opposite to the plurality of semiconductor layers with respect to the non-conductive distributed bragg reflector, with the first light-transmitting film having a refractive index lower than an effective refractive index of the distributed bragg reflector.

Semiconductor Light Emitting Device

This review covers a spectrum of optoelectronic properties of and uses for semi-insulating semiconductor heterostructures and thin films, including epilayers and quantum wells. Compensation by doping, implantation, and nonstoichiometric growth are described in terms of the properties of point defects and Fermi level stabilization and pinning. The principal optical and optoelectronic properties of semi-insulating epilayers and heterostructures, such as excitonic electroabsorption of quantum-confined excitons, are described, in addition to optical absorption by metallic or semimetallic precipitates in these layers. Low-temperature grown quantum wells that have an arsenic-rich nonstoichiometry and a supersaturated concentration of grown-in vacancies are discussed. These heterostructures experience transient enhanced diffusion and superlattice disordering. The review discusses the performance of optoelectronic heterostructures and microcavities that contain semi-insulating layers, such as buried heterostructure stripe lasers, vertical cavity surface emitting lasers, and optical electroabsorption modulators. Short time-scale applications arise from the ultrashort carrier lifetimes in semi-insulating materials, such as in photoconductors for terahertz generation, and in saturable absorbers for mode-locking solid state lasers. This review also comprehensively describes the properties and applications of photorefractive heterostructures. The low dark-carrier concentrations of semi-insulating heterostructures make these materials highly sensitive as dynamic holographic thin films that are useful for adaptive optics applications. The high mobilities of free carriers in photorefractive heterostructures produce fast dielectric relaxation rates that allow light-induced space-charge gratings to adapt to rapidly varying optical fringe patterns, canceling out environmental noise during interferometric detection in laser-based ultrasound, and in optical coherence tomography. They are also the functional layers in high-sensitivity dynamic holographic materials that replace static holograms in Fourier imaging systems and in experimental Tbit/s optical systems. Semi-insulating heterostructures and their applications have attained a degree of maturity, but many critical materials science issues remain unexplored.

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Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications

A large number of novel devices have been recently demonstrated using wafer fusion to integrate materials with different lattice constants. In many cases, devices created using this technique have shown dramatic improvements over those which maintain a single lattice constant. We present device results and characterizations of the fused interface between several groups of materials.

Wafer fusion: materials issues and device results

Encoded transmission and reception which reduces time side lobe are realized while suppressing increase of circuit scale. Transmission signals corresponding to a composite modulation code sequence composed from two or more modulation code sequences are outputted as transmission signals. A reception means demodulates reception signals stepwise by two or more demodulators. The demodulator can be thereby divided into two or more stages, and therefore with a circuit scale corresponding to the sum of the operation circuit numbers of two or more demodulators, time side lobe reduction effect can be obtained at a level equivalent to that obtainable with a circuit scale corresponding to the product of the operation circuit numbers of two or more demodulators.

Ultrasonic diagnostic apparatus

A multi-color light-emitting element has at least two optical micro-cavity structures (102-106) having respectively different optical lengths determining their emission wavelengths. Each micro-cavity structure contains a film (105) of organic material as a light-emitting region. These may be a single film (105) of uniform thickness in the element.

Light-emitting elements.

An optical transmission terminal device including a printed wiring board and an optical module mounted on the printed wiring board. The optical module includes an optical component mounting substrate, a photoelectric converter mounted on the substrate, a first optical fiber having one end optically coupled to the photoelectric converter, and a ferrule mounted on the substrate so as to partially project from the substrate. The other end portion of the first optical fiber is inserted and fixed in the ferrule. A wiring pattern formed on the printed wiring board and a feed electrode formed on the substrate are connected together by wire bonding. An optically coupled portion between the photoelectric converter and the first optical fiber and a connected portion between the wiring pattern and the feed electrode are commonly covered with a transparent resin. The optical transmission terminal device further includes an optical fiber connector housing mounted on the optical module for allowing connection of the first optical fiber to a second optical fiber.

Optical transmission terminal device

An optical module including a substrate having a groove; an optical waveguide layer formed on the substrate, the optical waveguide layer including an optical waveguide core having first and second ends, the first end being aligned with the groove, and an optical waveguide cladding covering the optical waveguide core; a ferrule having a through hole; and an optical fiber inserted and fixed in the through hole. The ferrule has a flat cut portion for semicylindrically exposing a part of the optical fiber inserted and fixed in the through hole. The ferrule is fixed at the flat cut portion to the substrate so that the part of the optical fiber exposed to the flat cut portion is inserted into the groove of the substrate until one end of the optical fiber abuts against the first end of the optical waveguide core.

Ferrule assembly and optical module

This paper describes advanced lithium niobate (LiNbO3) optical modulators for broadband optical communications. It includes 40-Gb/s ultralow voltage modulators, compact modulators and modulators for frequency comb generator and short pulse generation

Advanced LiNbO/sub 3/ optical modulators for broadband optical communications

High-speed and high-density interconnections between racks and modules in the high-performance computing systems and data centers are currently being developed. The transmission range of conventional electrical interconnections is limited due to the bandwidth of electrical channels. VCSEL-based optical interconnection technologies are a promising solution for overcoming bandwidth bottlenecks in large scale computing systems [1-3]. Although it is anticipated that the next challenge for optical interconnections is to move to a serial data-rate of 40Gb/s, there are few 40Gb/s class VCSELs at present. Overdriving is a method that boosts high-frequency response to overcome the VCSEL speed limit [4,5]. To develop high-density optical interconnections, a low-power over-driving IC is a key technology. In addition, the optical modulation amplitude (OMA) must be increased to enable long-distance transmission in large scale computing systems as a data center. To achieve this large modulation amplitude, we must overcome the jitter issue caused by the intrinsic group delay of VCSELs. In this paper, we present a 40Gb/s driver IC for over-driving a 25Gb/s VCSEL using a new 2-tap pre-emphasis circuit with tunable group-delay compensation. This circuit compensates for the complex group delay of VCSELs. With this circuit, we achieve 40Gb/s low-jitter operation with 2.3dBm OMA and reduce the power consumption to as low as 312mW/ch.

8.9 A 40Gb/s VCSEL over-driving IC with group-delay-tunable pre-emphasis for optical interconnection

A new structure semi‐insulator‐embedded flat‐surface buried heterostructure 1.3 μm InGaAsP/InP laser has been developed using chloride vapor phase epitaxy. cw threshold currents as low as 18 mA and high‐temperature cw operation up to 100 °C have been obtained. Small‐signal response above 4 GHz has been achieved and no remarkable roll‐off has been observed, which is due to small parasitic capacitance.

Kazuhiro Tanaka

Papers

Optical transmission terminal device

Ferrule assembly and optical module

Advanced LiNbO/sub 3/ optical modulators for broadband optical communications

8.9 A 40Gb/s VCSEL over-driving IC with group-delay-tunable pre-emphasis for optical interconnection

Semi‐insulator‐embedded InGaAsP/InP flat‐surface buried heterostructure laser