We present a review of experimental and theoretical studies of the anomalous Hall effect (AHE), focusing on recent developments that have provided a more complete framework for understanding this subtle phenomenon and have, in many instances, replaced controversy by clarity. Synergy between experimental and theoretical work, both playing a crucial role, has been at the heart of these advances. On the theoretical front, the adoption of Berry-phase concepts has established a link between the AHE and the topological nature of the Hall currents which originate from spin-orbit coupling. On the experimental front, new experimental studies of the AHE in transition metals, transition-metal oxides, spinels, pyrochlores, and metallic dilute magnetic semiconductors, have more clearly established systematic trends. These two developments in concert with first-principles electronic structure calculations, strongly favor the dominance of an intrinsic Berry-phase-related AHE mechanism in metallic ferromagnets with moderate conductivity. The intrinsic AHE can be expressed in terms of Berry-phase curvatures and it is therefore an intrinsic quantum mechanical property of a perfect cyrstal. An extrinsic mechanism, skew scattering from disorder, tends to dominate the AHE in highly conductive ferromagnets. We review the full modern semiclassical treatment of the AHE together with the more rigorous quantum-mechanical treatments based on the Kubo and Keldysh formalisms, taking into account multiband effects, and demonstrate the equivalence of all three linear response theories in the metallic regime. Finally we discuss outstanding issues and avenues for future investigation.

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Anomalous hall effect

A large amount of work world-wide has been directed towards obtaining an understanding of the fundamental characteristics of porous Si. Much progress has been made following the demonstration in 1990 that highly porous material could emit very efficient visible photoluminescence at room temperature. Since that time, all features of the structural, optical and electronic properties of the material have been subjected to in-depth scrutiny. It is the purpose of the present review to survey the work which has been carried out and to detail the level of understanding which has been attained. The key importance of crystalline Si nanostructures in determining the behaviour of porous Si is highlighted. The fabrication of solid-state electroluminescent devices is a prominent goal of many studies and the impressive progress in this area is described.

The structural and luminescence properties of porous silicon

We review the methods which have been developed over the past several years to determine the behavior of solids whose properties vary randomly at the microscopic level, with principal attention to systems having composition variation on a well-defined structure (random "alloys"). We begin with a survey of the various elementary excitations and put the dynamics of electrons, phonons, magnons, and excitons into one common descriptive Hamiltonian; we then review the use of double-time thermodynamic Green's functions to determine the experimental properties of systems. Next we discuss these aspects of the problem which derive from the statistical specification of the microscopic parameters; we examine what information can and cannot be obtained from averaged Green's functions. The central portion of the review concerns methods for calculating the averaged Green's function to successively better approximation, including various self-consistent methods, and higher-order cluster effects. The last part of the review presents a comparison of theory with the experimental results of a variety of properties---optical, electronic, magnetic, and neutron scattering. An epilogue calls attention to the similarity between these problems and those of other fields where random material heterogeneity has played an essential role.

The theory and properties of randomly disordered crystals and related physical systems

This paper reviews the theory and applications of photoacoustic (also called optoacoustic) methods belonging to the more general area of photothermal measurement techniques. The theory covers excitation of gaseous or condensed samples with modulated continuous light beams or pulsed light beams. The applications of photoacoustic methods include spectroscopy, monitoring deexcitation processes, probing physical properties of materials, and generating mechanical motions. Several other related photothermal methods, as well as particle-acoustics and wave-acoustics methods are also described. This review complements an earlier and narrower review [Rev. Mod. Phys. 53, 517 (1981)] that is mainly concerned with sensitive detection by pulsed photoacoustic spectroscopy in condensed matter.

Applications of photoacoustic sensing techniques

Electrons in disordered systems and the theory of localization

Coherent Potential Approximation. Basic concepts and applications

New evidence for creation of dangling bonds by high optical excitation at low temperatures is presented through the time-resolved luminescence measurements and ESR measurements in glow discharge amorphous silicon.

New Evidence for Defect Creation by High Optical Excitation in Glow Discharge Amorphous Silicon

Fatigue effect in luminescence of glow discharge amorphous silicon at low temperatures

We present a microscopic model for the photocreation of silicon dangling bonds, taking into account the combined effects of breaking of weak bonds, Si–H bond switching, and H-tunneling which occur under intense optical excitation. We also discuss the kinetics of the photocreation of silicon dangling bonds, taking into account that the other defects than dangling bonds are photocreated.

Kazuo Morigaki

Papers

Coherent Potential Approximation. Basic concepts and applications

New Evidence for Defect Creation by High Optical Excitation in Glow Discharge Amorphous Silicon

Fatigue effect in luminescence of glow discharge amorphous silicon at low temperatures

Microscopic Mechanism for the Photo-Creation of Dangling Bonds in a-Si:H

Superconductivity and metal-insulator transition in amorphous Si1−xAux system