An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An electrically pumped light source on silicon is a key element needed for photonic integrated circuits on silicon. Here we report an electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding. This laser runs continuous-wave (c.w.) with a threshold of 65 mA, a maximum output power of 1.8 mW with a differential quantum efficiency of 12.7 % and a maximum operating temperature of 40 degrees C. This approach allows for 100's of lasers to be fabricated in one bonding step, making it suitable for high volume, low-cost, integration. By varying the silicon waveguide dimensions and the composition of the III-V layer, this architecture can be extended to fabricate other active devices on silicon such as optical amplifiers, modulators and photo-detectors.

Electrically pumped hybrid AlGaInAs-silicon evanescent laser

Because of the low dimensional power of its force scaling law, surface tension is appropriate for carrying out reshaping and assembly in the microstructure size domain. This paper reviews work on surface tension powered self-assembly of microstructures. The existing theoretical approaches for rotational assembly are unified. The demonstrated fabrication processes are compared. Mechanisms for accurately determining the assembled shape are discussed, and the limits on accuracy and structural distortion are considered. Applications in optics, electronics and mechanics are described. More complex operations (including the combination of self-assembly and self-organization) are also reviewed.

Surface tension-powered self-assembly of microstructures - the state-of-the-art

Thanks to advanced semiconductor microfabrication technology, chip-scale integration and miniaturization of lab-on-a-chip components, silicon-based optical biosensors have made significant progress for the purpose of point-of-care diagnosis In this review, we provide an overview of the state-of-the-art in evanescent field biosensing technologies including interferometer, microcavity, photonic crystal, and Bragg grating waveguide-based sensors Their sensing mechanisms and sensor performances, as well as real biomarkers for label-free detection, are exhibited and compared We also review the development of chip-level integration for lab-on-a-chip photonic sensing platforms, which consist of the optical sensing device, flow delivery system, optical input and readout equipment At last, some advanced system-level complementary metal-oxide semiconductor (CMOS) chip packaging examples are presented, indicating the commercialization potential for the low cost, high yield, portable biosensing platform leveraging CMOS processes

Silicon Photonic Biosensors Using Label-Free Detection.

Silica-based planar lightwave circuits (PLC) provide various important devices for both optical wavelength-division-multiplexing networks and optical access network. This paper is an overview of recent progress in PLC technology including optical power splitters, arrayed-waveguide gratings, thermooptic switches, and hybrid integrated PLC's.

Silica-based planar lightwave circuits

An opto-electronic hybrid integrated circuit of the present invention satisfy a low-loss optical waveguide function, an optical bench function and a high-frequency electrical wiring function. The circuit includes a substrate such as a silicon substrate, a dielectric optical waveguide part arranged in a recess of the substrate, and an optical device mounting part formed on a protrusion of the substrate. An electrical wiring part is disposed on the dielectric layer. The optical device is mounted on the substrate. An optical sub-module includes the optical device which is possible to mount on the substrate.

Opto-electronic hybrid integration platform, optical sub-module, opto-electronic hybrid integration circuit, and process for fabricating platform

The authors have fabricated an optical WDM module with a simple configuration using a PLC platform together with a spot-size converted LD (SS-LD) and a waveguide PD (WG-PD). Since the module can be formed simply by flip-chip bonding of the SS-LD and the WG-PD, this configuration reduces the number of components, and thus helps achieve a cost reduction.

Application of planar lightwave circuit platform to hybrid integrated optical WDM transmitter/receiver module

A thin film filter-embedded wavelength-division multiplexer is designed for a hybrid-integrated WDM transceiver based on a silica-based PLC platform. A compact multiplexer with a low insertion loss of 1.1 dB and a low crosstalk of <-50 dB is successfully fabricated.

Filter-embedded wavelength-division multiplexer for hybrid-integrated transceiver based on silica-based PLC

An index alignment technique was developed for a planar lightwave circuit platform. The technique was successfully applied to the hybrid integration of a spot-size converted laser diode on the platform. The fabricated modules exhibited an average coupling loss of 4.2 dB and a maximum optical output power of 10 mW at an injection current of 70 mA.

Hybrid integration of spot-size converted laser diode on planar lightwave circuit platform by passive alignment technique

We propose a planar lightwave circuit (PLC) platform constructed on a silica-on-terraced-silicon (STS) substrate for opto-electronic hybrid integration. This platform consists of an embedded silica PLC region, a terraced silicon region for optical device assembly, and a high-speed electrical circuit region. In the electrical circuit region, the coplanar waveguides (CPW) are prepared on a thick-silica/silicon substrate. This structure reduces the propagation loss of the CPW drastically to 2.7 dB/cm at 10 GHz, because the loss tangent (tan /spl delta/) of the dielectric constants of silica is much smaller than that of silicon. In order to study the feasibility of this PLC-platform for multi-gigabit operation, we used it to fabricate an LD module in which an LD chip and LD-driver integrated circuits (IC) are assembled on the PLC-platform. A bit error rate measurement of this LD module in a 2.5 Gb/s NRZ showed that this platform is applicable to multi-gigabit optical signal processing.

Kazuyuki Moriwaki

Papers

Opto-electronic hybrid integration platform, optical sub-module, opto-electronic hybrid integration circuit, and process for fabricating platform

Application of planar lightwave circuit platform to hybrid integrated optical WDM transmitter/receiver module

Filter-embedded wavelength-division multiplexer for hybrid-integrated transceiver based on silica-based PLC

Hybrid integration of spot-size converted laser diode on planar lightwave circuit platform by passive alignment technique

Planar lightwave circuit platform with coplanar waveguide for opto-electronic hybrid integration