Kent M. Geib

TL;DR: In this paper, an index-guided vertical cavity top-surface emitting laser diodes have been fabricated from an all epitaxial structure with conducting mirrors by selective lateral oxidation of AlGaAs.

TL;DR: In this article, a vertical-cavity surface emitting laser fabricated using selective oxidation to form a current aperture under a top monolithic distributed Bragg reflector mirror is reported.

TL;DR: In this article, the chemistry, microstructure, and processing of buried oxides converted from AlGaAs layers using wet oxidation was reviewed and the influence of gas flow, gas composition, temperature, Al-content, and layer thickness on the oxidation rate was characterized.

TL;DR: In this article, the authors used two n-type As/GaAs distributed Bragg reflectors with a selectively oxidized current aperture adjacent to the optical cavity, and the top output mirror contains a tunnel junction to inject holes into the active region.

TL;DR: In this article, high-speed studies of oxide-confined, submilliampere threshold, oxide-constrained vertical cavity surface emitting lasers show modulation bandwidths > 16 GHz and very high modulation current efficiency factors occur at low bias but decrease as the modulation bandwidth and frequency of the relative intensity noise peak saturate at higher currents.