Room temperature continuous wave InGaAsN quantum well vertical cavity lasers emitting at 1.3 um
Kent D. Choquette,John F. Klem,Arthur J. Fischer,O. Blum,A. A. Allerman,I. J. Fritz,Steven R. Kurtz,William G. Breiland,R. M. Sieg,Kent M. Geib,J.W. Scott,R.L. Naone +11 more
TLDR
In this article, the authors used two n-type As/GaAs distributed Bragg reflectors with a selectively oxidized current aperture adjacent to the optical cavity, and the top output mirror contains a tunnel junction to inject holes into the active region.Abstract:
Selectively oxidized vertical cavity lasers emitting at 1294 nm using InGaAsN quantum wells are reported for the first time which operate continuous wave at and above room temperature. The lasers employ two n-type Al{sub 0.94}Ga{sub 0.06}As/GaAs distributed Bragg reflectors each with a selectively oxidized current aperture adjacent to the optical cavity, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave single mode lasing is observed up to 55 C. These lasers exhibit the longest wavelength reported to date for vertical cavity surface emitting lasers grown on GaAs substrates.read more
Citations
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Journal ArticleDOI
Recent Advances of VCSEL Photonics
TL;DR: Recent advances in VCSEL photonics for optical interconnects will be reviewed.
Journal ArticleDOI
Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal
S.G. Spruytte,C.W. Coldren,James S. Harris,William R. Wampler,Peter Krispin,Klaus Ploog,Michael C. Larson +6 more
TL;DR: In this article, the role of nitrogen impurity in low luminescence efficiency of nitride-arsenides was investigated and the lattice parameter does not decrease linearly with nitrogen concentration for levels of nitrogen above 2.9 mol'% GaN.
Journal ArticleDOI
GaInNAs long-wavelength lasers: progress and challenges
TL;DR: In this article, the authors review both the materials challenges and progress in growth of the metastable GaInNAs alloys required to reach the 1.3-1.55 μm communication wavelengths and the challenges and advances in device design for both vertical-cavity surface-emitting lasers and higher power edge-EMitting lasers.
Journal ArticleDOI
Monolithic VCSEL with InGaAsN active region emitting at 1.28 [micro sign]m and CW output power exceeding 500 [micro sign]W at room temperature
TL;DR: In this paper, an electrically pumped MBE-grown VCSEL with an InGaAsN active region was used to achieve an output power of 1.28 /spl mu/m with record characteristics.
Journal ArticleDOI
Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers
TL;DR: In this paper, metalorganic chemical vapor deposition-grown In0.4Ga0.6As0.995N0.005 quantum well (QW) lasers have been realized, at an emission wavelength of 1.295 μm, with threshold and transparency current densities as low as 211 A/cm2 (for L=2000 μm) and 75 A/m2, respectively.
References
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Journal ArticleDOI
1.3 μm room-temperature GaAs-based quantum-dot laser
TL;DR: In this article, the ground state of an InGaAs/GaAs quantum-dot ensemble was obtained at 1.31 μm with a threshold current density of 270 A/cm2 using high-reflectivity facet coatings.
Patent
Efficient semiconductor light-emitting device and method
TL;DR: In this article, a semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device.
Journal ArticleDOI
GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes
M.C. Larson,Masahiko Kondow,Takeshi Kitatani,Kouji Nakahara,K. Tamura,Hiroaki Inoue,Kazuhisa Uomi +6 more
TL;DR: In this paper, the vertical-cavity surface-emitting laser diodes with GaInNAs-GaAs quantum-well active layers are demonstrated for the first time, with an active wavelength near 1.18 /spl mu/m, threshold current density of 3.1 kA/cm/sup 2, slope efficiency of /spl sim/0.04 W/A, and output power above 5 mW for 45-/spl µ/m diameter devices.
Journal ArticleDOI
Uniform threshold current, continuous-wave, singlemode 1300 nm vertical cavity lasers from 0 to 70°C
TL;DR: In this article, the authors describe the first 1300 nm VCSELs which are compatible with commercial datacom performance requirements, and they operate at CW up to 80°C.
Journal ArticleDOI
1-mW CW-RT monolithic VCSEL at 1.55 μm
J. Boucart,Christophe Starck,Fabienne Gaborit,Antonina Plais,N. Bouche,Estelle Derouin,Leon Goldstein,C. Fortin,D. Carpentier,Paul Salet,Francois Brillouet,Joel Jacquet +11 more
TL;DR: In this article, the authors demonstrate the first result of a high power (1 mW) continuous-wave room-temperature vertical-cavity surface-emitting laser emitting at 155 /spl mu/m using a single InP substrate.