K
Kihyun Kim
Researcher at Pohang University of Science and Technology
Publications - 59
Citations - 2350
Kihyun Kim is an academic researcher from Pohang University of Science and Technology. The author has contributed to research in topics: Nanowire & Silicon. The author has an hindex of 21, co-authored 59 publications receiving 1761 citations. Previous affiliations of Kihyun Kim include Ames Research Center.
Papers
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Journal ArticleDOI
A zero-thermal-quenching phosphor
Yoon Hwa Kim,Paulraj Arunkumar,Bo Young Kim,Sanjith Unithrattil,Eden Kim,Su Hyun Moon,Jae Young Hyun,Kihyun Kim,Donghwa Lee,Jong-Sook Lee,Won Bin Im +10 more
TL;DR: A blue-emitting Na3-2xSc2(PO4)3:xEu2+ phosphor that does not exhibit thermal quenching even up to 200 °C is reported, which could initiate the exploration of phosphors with zero thermalQuenching for high-power LED applications.
Book ChapterDOI
Public key encryption with conjunctive field keyword search
TL;DR: The security model of the public key encryption with conjunctive field keyword search mechanism is defined and two efficient schemes whose security is proved in the random oracle model are proposed.
Journal ArticleDOI
Silicon nanowire biosensors for detection of cardiac troponin I (cTnI) with high sensitivity.
TL;DR: Highly sensitive and label-free detection of cardiac troponin I (cTnI), a biomarker for diagnosis of acute myocardial infarction, using silicon nanowire field-effect transistors using honeycomb-like structure to offer improved electrical performance and increased sensing area.
Journal ArticleDOI
Electrical characteristics of 20-nm junctionless Si nanowire transistors
Chan-Hoon Park,Myung-Dong Ko,Kihyun Kim,Rock-Hyun Baek,Chang-Woo Sohn,Chang-Ki Baek,Soo-Young Park,M.J. Deen,M.J. Deen,Yoon-Ha Jeong,Jeong-Soo Lee +10 more
TL;DR: In this article, the junctionless tri-gate transistor with a gate length of 20-nm showed excellent electrical characteristics with a high Ion/Ioff ratio (>106), good sub-threshold slope (∼79mV/dec), and low drain-induced barrier lowering.
Journal ArticleDOI
Role of yttrium in activation of 〈c + a〉 slip in magnesium: An atomistic approach
TL;DR: In this article, the effect of Y addition on the slip behavior of an edge dislocation on basal, prismatic and second-order pyramidal slip planes of Mg has been investigated using a molecular dynamics simulation.