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Koen Verhaege

Researcher at Katholieke Universiteit Leuven

Publications -  22
Citations -  818

Koen Verhaege is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Electrostatic discharge & Snapback. The author has an hindex of 13, co-authored 22 publications receiving 811 citations. Previous affiliations of Koen Verhaege include Sarnoff Corporation.

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Patent

Electrostatic discharge protection structures for high speed technologies with mixed and ultra-low voltage supplies

TL;DR: An electrostatic discharge (ESD) protection circuit (302) in a semiconductor integrated circuit (IC) (100) having protected circuitry is described in this article, where a diode turn-on device (308) is coupled in a forward conduction direction from the pad to a first gate (336) of the ESD protection device.
Patent

Low voltage silicon controlled rectifier (SCR) for electrostatic discharge (ESD) protection of silicon-on-insulator technologies

TL;DR: In this paper, a silicon-on-insulator (SOI) electrostatic discharge (ESD) protection device is proposed to protect very sensitive thin gate oxides by limiting the power dissipation during the ESD event.
Journal ArticleDOI

High holding current SCRs (HHI-SCR) for ESD protection and latch-up immune IC operation

TL;DR: In this article, a Silicon Controlled Rectifier (SCR) for power line and local I/O ESD protection is presented, which exhibits a dual ESD clamp characteristic: low-current high-voltage clamping and high-current low-voltages clamping.
Patent

Multi-finger current ballasting ESD protection circuit and interleaved ballasting for ESD-sensitive circuits

TL;DR: A multi-finger electrostatic discharge (ESD) protection circuit has at least two first resistive channels (RS1, RS2) defining input fingers, each having a drain and source as discussed by the authors.
Proceedings Article

High Holding Current SCRs (HHI-SCR) for ESD protection and latch-up immune IC operation

TL;DR: The HHI-SCR exhibits a dual ESD clamp characteristic: low-current high-voltage clamping and high-current low-voltages clamping, which enable latch-up immune normal operation as well as superior full chip ESD protection.