https://www.jpcomplex.ir/Content/media/image/2013/08/772_orig.pdf

Electrochemical technologies in wastewater treatment

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface Hydrogen is introduced into The active layer A thin film comprising SiO x N y is formed to cover the active layer and then a gate insulating film comprising a silicon oxide film formed on the thin film comprising SiO x N y  Also, a thin film comprising SiO x N y is formed under the active layer The active layer includes a metal element at a concentration of 1×10 15 to 1×10 19 cm −3 and hydrogen at a concentration of 2×10 19 to 5×10 21 cm −3 

Semiconductor device and method for forming the same

Doping effect of buckminsterfullerene in conducting polymer: Change of absorption spectrum and quenching of luminescene

An electro-optical device having a plurality of pixels including a plurality of EL elements, wherein the electro-optical device provides a gray scale display by controlling a period of time at which the plurality of the EL elements emit light in one frame period; the plurality of the EL elements have a first electrode and a second electrode; the first electrode is held at a constant potential; and a potential of the second electrode changes in such a manner that a polarity of an EL driving voltage, which is a difference between the potentials applied to the first and second electrodes, is inverted for each one frame period.

Electro-optical device

The electrical conductivity of diamond thin films produced by the hot‐filament technique is found to increase when diborane is incorporated in the precursor gas mixture. The combination of well‐defined bulk conductivity measurements with quantitative secondary‐ion mass spectrometry and Raman spectroscopy shows that the conductivity increase is associated with atomic boron doping and rules out any significant role for a graphitic‐type component.

Boron doping of diamond thin films

Diamond thin films have been doped with nitrogen during growth by the hot‐filament technique. For nitrogen concentrations in the films, determined by quantitative secondary ion‐mass spectroscopy (SIMS) exceeding about 3×1018 atoms/cc, a decrease of several orders of magnitude is observed in the electrical conductivity for temperatures at or above room temperature. Qualitatively, this decrease is as expected, assuming compensation of existing acceptor states in nominally undoped diamond thin films by substitutional nitrogen which is known to introduce a deep‐lying donor level.

Compensation effects in nitrogen-doped diamond thin films

Photoconductivity in solid films of C60/70

Diamond films have been in‐diffused with lithium in an effort to produce n‐type diamond by interstitial doping. Although lithium incorporation was established, only small changes in electrical conductivity and no thermionic emission from donor levels, which should lie only a few tenths of an electron volt below the vacuum level, were observed. To account for these observations, studies of the spectral dependence of external photoemission of lithium‐doped and undoped films were undertaken. These indicate that the lithium donors are compensated by high densities of acceptor states distributed over several electron volts. This first, direct observation of band‐gap states in diamond films accounts for a number of reported properties including their relatively high electrical conductivity and small field effect.

Lithium doping and photoemission of diamond thin films

A thin film transistor in which a source electrode is electrically isolated from a drain electrode and a gate electrode. The gate electrode is formed on one surface of an electrically insulating layer. A semiconducting layer is formed on the other surface of the electrically insulating layer. The semiconducting layer has a charge carrier mobility of at least 1 cm 2 /V-sec. and is made from a polycrystalline diamond layer. The source electrode and the drain electrode are formed on one surface of the polycrystalline diamond layer. The other surface of the polycrystalline diamond layer is in integral contact with the other surface of the electrically insulating layer.

Koji Okumura

Papers

Boron doping of diamond thin films

Compensation effects in nitrogen-doped diamond thin films

Photoconductivity in solid films of C60/70

Lithium doping and photoemission of diamond thin films

Thin film transistor