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Koji Watari

Researcher at National Institute of Advanced Industrial Science and Technology

Publications -  224
Citations -  3206

Koji Watari is an academic researcher from National Institute of Advanced Industrial Science and Technology. The author has contributed to research in topics: Sintering & Ceramic. The author has an hindex of 28, co-authored 224 publications receiving 2939 citations. Previous affiliations of Koji Watari include Ryukoku University.

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Thermally conductive composite films of hexagonal boron nitride and polyimide with affinity-enhanced interfaces

TL;DR: In this article, a thermal conductivity of 7 W m−1 K−1 was achieved at solids loading of 60 vol% with flexibility maintained, and the authors aimed at creating composite films of hexagonal boron nitride (hBN) particles and polyimide.
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High‐Thermal‐Conductivity AlN Filler for Polymer/Ceramics Composites

TL;DR: In this paper, aluminum nitride (AlN) granules were added as a ceramic filler to increase the thermal conductivity of polymer/ceramic composites, and the resulting composite showed a high conductivity with 9.3 W (m·°C)−1.
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High Thermal Conductivity Silicon Nitride Ceramic

TL;DR: In this article, it was shown that non-metallic single crystals with a diamond-like structure, such as SiC, BP, and AlN, have high intrinsic thermal conductivities of over 300 W m−1 K−1,1,2.
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Thermal conductivity of silicon carbide densified with rare-earth oxide additives

TL;DR: In this article, a submicrometer-size β-SiC powder doped with various amounts of combinations of Y 2 O 3 and La 2 o 3 as sintering additives was hot-pressed at 2000°C under 40 MPa for 2 h in Ar, and some hot-press specimens were subsequently annealed at 1900°C for 4 hours in Ar. An explanation on the correlation between thermal conductivity, phase composition, and microstructure was proposed.
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Microstructural characterization of high-thermal-conductivity SiC ceramics

TL;DR: In this article, a high-thermal conductivity SiC ceramic with very small amount of BeO additive, having a value of 270 Wm −m −1 ǫ K −1 corresponding to roughly 50% of the intrinsic SiC value, is characterized by high-resolution transmission electron microscopy.