Anyone who ever took an electronics laboratory class will be familiar with the fundamental passive circuit elements: the resistor, the capacitor and the inductor. However, in 1971 Leon Chua reasoned from symmetry arguments that there should be a fourth fundamental element, which he called a memristor (short for memory resistor). Although he showed that such an element has many interesting and valuable circuit properties, until now no one has presented either a useful physical model or an example of a memristor. Here we show, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage. These results serve as the foundation for understanding a wide range of hysteretic current-voltage behaviour observed in many nanoscale electronic devices that involve the motion of charged atomic or molecular species, in particular certain titanium dioxide cross-point switches.

/pdf/the-missing-memristor-found-55upit5xe7.pdf

The missing memristor found

Nanocrystals are fundamental to modern science and technology. Mastery over the shape of a nanocrystal enables control of its properties and enhancement of its usefulness for a given application. Our aim is to present a comprehensive review of current research activities that center on the shape-controlled synthesis of metal nanocrystals. We begin with a brief introduction to nucleation and growth within the context of metal nanocrystal synthesis, followed by a discussion of the possible shapes that a metal nanocrystal might take under different conditions. We then focus on a variety of experimental parameters that have been explored to manipulate the nucleation and growth of metal nanocrystals in solution-phase syntheses in an effort to generate specific shapes. We then elaborate on these approaches by selecting examples in which there is already reasonable understanding for the observed shape control or at least the protocols have proven to be reproducible and controllable. Finally, we highlight a number of applications that have been enabled and/or enhanced by the shape-controlled synthesis of metal nanocrystals. We conclude this article with personal perspectives on the directions toward which future research in this field might take.

Shape‐Controlled Synthesis of Metal Nanocrystals: Simple Chemistry Meets Complex Physics?

Many metal–insulator–metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms. The ion-migration effects are coupled to redox processes which cause the change in resistance. They are subdivided into cation-migration cells, based on the electrochemical growth and dissolution of metallic filaments, and anion-migration cells, typically realized with transition metal oxides as the insulator, in which electronically conducting paths of sub-oxides are formed and removed by local redox processes. From this insight, we take a brief look into molecular switching systems. Finally, we discuss chip architecture and scaling issues.

http://chialvo.org/Curso/UBACurso/DIA7/Papers/Aono_NatMat_07_Ionic%20Switching%20Memory.pdf

Nanoionics-based resistive switching memories

Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

Memristive devices are electrical resistance switches that can retain a state of internal resistance based on the history of applied voltage and current. These devices can store and process information, and offer several key performance characteristics that exceed conventional integrated circuit technology. An important class of memristive devices are two-terminal resistance switches based on ionic motion, which are built from a simple conductor/insulator/conductor thin-film stack. These devices were originally conceived in the late 1960s and recent progress has led to fast, low-energy, high-endurance devices that can be scaled down to less than 10 nm and stacked in three dimensions. However, the underlying device mechanisms remain unclear, which is a significant barrier to their widespread application. Here, we review recent progress in the development and understanding of memristive devices. We also examine the performance requirements for computing with memristive devices and detail how the outstanding challenges could be met.

Memristive devices for computing

Despite much progress in semiconductor integrated circuit technology, the extreme complexity of the human cerebral cortex, with its approximately 10(14) synapses, makes the hardware implementation of neuromorphic networks with a comparable number of devices exceptionally challenging. To provide comparable complexity while operating much faster and with manageable power dissipation, networks based on circuits combining complementary metal-oxide-semiconductors (CMOSs) and adjustable two-terminal resistive devices (memristors) have been developed. In such circuits, the usual CMOS stack is augmented with one or several crossbar layers, with memristors at each crosspoint. There have recently been notable improvements in the fabrication of such memristive crossbars and their integration with CMOS circuits, including first demonstrations of their vertical integration. Separately, discrete memristors have been used as artificial synapses in neuromorphic networks. Very recently, such experiments have been extended to crossbar arrays of phase-change memristive devices. The adjustment of such devices, however, requires an additional transistor at each crosspoint, and hence these devices are much harder to scale than metal-oxide memristors, whose nonlinear current-voltage curves enable transistor-free operation. Here we report the experimental implementation of transistor-free metal-oxide memristor crossbars, with device variability sufficiently low to allow operation of integrated neural networks, in a simple network: a single-layer perceptron (an algorithm for linear classification). The network can be taught in situ using a coarse-grain variety of the delta rule algorithm to perform the perfect classification of 3 × 3-pixel black/white images into three classes (representing letters). This demonstration is an important step towards much larger and more complex memristive neuromorphic networks.

Training and operation of an integrated neuromorphic network based on metal-oxide memristors

Recent developments concerning the rapid single-flux-quantum (RSFQ) circuit family are reviewed. Elementary cells in this circuit family can generate, pass, memorize, and reproduce picosecond voltage pulses with a nominally quantized area corresponding to transfer of a single magnetic flux quantum across a Josephson junction. Functionally, each cell can be viewed as a combination of a logic gate and an output latch (register) controlled by clock pulses, which are physically similar to the signal pulses. Hand-shaking style of local exchange by the clock pulses enables one to increase complexity of the LSI RSFQ systems without loss of operating speed. The simplest components of the RSFQ circuitry have been experimentally tested at clock frequencies exceeding 100 GHz, and an increase of the speed beyond 300 GHz is expected as a result of using an up-to-date fabrication technology. This review includes a discussion of possible future developments and applications of this novel, ultrafast digital technology. >

RSFQ logic/memory family: a new Josephson-junction technology for sub-terahertz-clock-frequency digital systems

The goal of this paper is to review in brief the basic physics of single-election devices, as well as their-current and prospective applications. These devices based on the controllable transfer of single electrons between small conducting "islands", have already enabled several important scientific experiments. Several other applications of analog single-election devices in unique scientific instrumentation and metrology seem quite feasible. On the other hand, the prospect of silicon transistors being replaced by single-electron devices in integrated digital circuits faces tough challenges and remains uncertain. Nevertheless, even if this replacement does not happen, single electronics will continue to play an important role by shedding light on the fundamental size limitations of new electronic devices. Moreover, recent research in this field has generated some by-product ideas which may revolutionize random-access-memory and digital-data-storage technologies.

Single-electron devices and their applications

This review covers experimental results and theoretical ideas on the properties of superconducting weak links, i.e., weak electrical contacts between superconducting electrodes which exhibit direct (non-tunnel-type) conductivity. When the dimensions of such weak links are sufficiently small, the Josephson effect is observed in them, in other words, a single-valued and $2\ensuremath{\pi}$ -periodic relationship exists between the supercurrent ${I}_{s}$ and the phase difference $\ensuremath{\sigma}$ of the electrodes. With increasing dimensions, this relationship has a tendency to deviate gradually from the Josephson behavior. This deviation varies, depending on whether the weak link material is a superconductor or a normal metal. The various known types of weak links are described, and special mention is made of those weak links which are most suitable for physical investigations and have various practical applications. The data on the nonstationary (ac) processes in weak links, when the phase difference varies with time, are analyzed. In conclusion the existing concepts about the processes in weak links are briefly summarized and the most urgent outstanding problems are outlined.

Superconducting weak links

This monograph offers a detailed description of the statistics, dynamics and statics of Josephson junctions. Particular emphasis is placed on the dynamics of new circuits and analog and digital devices using single quanta of magnetic flux.

Konstantin K. Likharev

Papers

Training and operation of an integrated neuromorphic network based on metal-oxide memristors

RSFQ logic/memory family: a new Josephson-junction technology for sub-terahertz-clock-frequency digital systems

Single-electron devices and their applications

Superconducting weak links

Dynamics of Josephson Junctions and Circuits