scispace - formally typeset
K

Kosei Noda

Publications -  18
Citations -  307

Kosei Noda is an academic researcher. The author has contributed to research in topics: Semiconductor device & Transistor. The author has an hindex of 7, co-authored 18 publications receiving 307 citations.

Papers
More filters
Patent

Logic circuit and semiconductor device

TL;DR: In this paper, the authors propose a logic circuit with an oxide semiconductor layer having a function of a channel formation layer and in which an off current is 1×10−13 A or less per micrometer in channel width.
Patent

Liquid crystal display device and electronic device including the liquid crystal display device

TL;DR: In this article, a liquid crystal display device including a plurality of pixels in a display portion and configured to perform display in plurality of frame periods, each of the frame periods includes a writing period and a holding period, and after an image signal is input to each pixel in the writing period, a transistor included in each pixel is turned off and held for at least 30 seconds in the holding period.
Patent

Voltage regulator circuit

TL;DR: In this article, a voltage regulator circuit includes a transistor and a capacitor, and an oxide semiconductor layer is used for a channel formation layer, an off-state current is less than or equal to 10 aA/μm.
Patent

Liquid crystal display device and electronic apparatus having the same

TL;DR: In this paper, a liquid crystal display device includes: a driver circuit, a pixel portion, a signal generation circuit for generating a control signal for driving the driver circuit portion and an image signal which is supplied to the pixel portion; a memory circuit; a comparison circuit for detecting a difference of image signals for a series of frame periods among image signals stored for respective frame periods in the memory circuit.
Patent

Analog circuit and semiconductor device

TL;DR: In this article, an analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×10 19 atoms/cm 3 or lower, and substantially functions as an insulator in the state where no electric field is generated.