Patent
Voltage regulator circuit
TLDR
In this article, a voltage regulator circuit includes a transistor and a capacitor, and an oxide semiconductor layer is used for a channel formation layer, an off-state current is less than or equal to 10 aA/μm.Abstract:
A voltage regulator circuit includes a transistor and a capacitor. The transistor includes a gate, a source, and a drain, a first signal is inputted to one of the source and the drain, a second signal which is a clock signal is inputted to the gate, an oxide semiconductor layer is used for a channel formation layer, and an off-state current is less than or equal to 10 aA/μm. The capacitor includes a first electrode and a second electrode, the first electrode is electrically connected to the other of the source and the drain of the transistor, and a high power source voltage and a low power source voltage are alternately applied to the second electrode.read more
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References
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Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
Journal ArticleDOI
Hydrogen as a cause of doping in zinc oxide
Van de Walle,G Chris +1 more
TL;DR: A first-principles investigation, based on density functional theory, produces strong evidence that hydrogen acts as a source of conductivity: it can incorporate in high concentrations and behaves as a shallow donor.
Journal ArticleDOI
Native point defects in ZnO
TL;DR: In this paper, the authors performed a comprehensive first-principles investigation of point defects in ZnO based on density functional theory within the local density approximation (LDA) as well as the $\mathrm{LDA}+U$ approach for overcoming the band-gap problem.
Journal ArticleDOI
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
TL;DR: The fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator provides a step toward the realization of transparent electronics for next-generation optoelectronics.
Journal ArticleDOI
Oxygen vacancies in ZnO
TL;DR: Vlasenko and Watkins as mentioned in this paper showed that the oxygen vacancy VO is not a shallow donor, but has a deep e(2+∕0) level at ∼10eV below the conduction band.