An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

An apparatus for dissociating gases includes a plasma chamber that may be formed from a metallic material and a transformer having a magnetic core surrounding a portion of the plasma chamber and having a primary winding. The apparatus also includes one or more switching semiconductor devices that are directly coupled to a voltage supply and that have an output coupled to the primary winding of the transformer. The one or more switching semiconductor devices drive current in the primary winding that induces a potential inside the chamber that forms a plasma which completes a secondary circuit of the transformer.

Toroidal low-field reactive gas source

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Process feed management for semiconductor substrate processing

To provide a cleaning method for an etching apparatus for a metal film that efficiently removes an etching residue deposited in an etching process chamber, assures the reproducibility of the etching performance, and keeps the etching process chamber in a low-dust-emission condition. Each time one workpiece with a metal film is etched (S 1 ), the interior of the vacuum chamber is cleaned by replacing the workpiece with a dummy substrate (S 2 ), performing a first step of plasma processing using oxygen (O 2 ) and carbon tetrafluoride (CF 4 ) to remove a carbon-based deposit pile (S 3 ), and performing a second step of plasma processing using boron trichloride (BCl 3 ) and chlorine (Cl 2 ) to remove a residue that could not be removed by the first step and an etching residue of the metal film (S 4 ).

Method of cleaning etching apparatus

A sample treating method and apparatus for treating a sample such as a semiconductor element substrate or the like, by etching and anticorrosion-­treatment, uses an anticorrosion gas plasma to remove adhered matters formed by the etching of the sample. The anticorrosion gas comprises halogen gas or inert gas. Wet-type anticorrosion treatment is not required, enabling the throughput to be improved in treating the samples. Both etching and anticorrosion treatment may take place in the same chamber (90). Passivation treatmemt, e.g. by oxygen plasma or ozone, may take place subsequently in a separate chamber (91).

Sample treating method and apparatus

PURPOSE: To eliminate a need for an anticorrosive treatment of a wet system by a method wherein an etched specimen is treated so as to be anticorrosive by utilizing a plasma of a gas for anti-corrosive use which bas been produced outside a treatment chamber and which has been transported (transferred) into the treatment chamber. CONSTITUTION: A specimen is held inside a treatment chamber by using a specimen-holding means 63; a gas 111 for etching use is transformed into a plasma by using a plasma-forming means 50; the specimen is etched by utilizing the plasma. On the other hand, a gas 113 tor anticorrosive use is transformed into a plasma by using the plasma-forming means 50; the etched specimen is treated by utilizing the plasma. In this manner, a reaction product which has been produced by this etching treatment and which has adhered to the specimen and a corrosive substance are removed. Thereby, an anticorrosive treatment of a wet system is not required; the time required to complete the acticorrosive treatment of the specimen can be shortened. COPYRIGHT: (C)1991,JPO&Japio

Method and apparatus for treatment of specimen

PROBLEM TO BE SOLVED: To maintain the state where there is little dusting of foreign substances from the inside of an etching processing chamber, and the reproducibility of etching performance is secured, by efficiently removing sediment accumulated by etching in the inside of the etching processing chamber, in the cleaning method of the etching device for etching a metal film. SOLUTION: The cleaning method in a vacuum vessel is performed such that; every time one sample with a metal film is etched (S1), a dummy substrate and the sample are replaced (S2), a sediment of a carbon system substance is removed by plasma polymerization of oxygen O 2 and carbon tetrafluoride CF 4 (S3) used as a first process, and the residual material and the metal film is removed (S4) which cannot be removed by the first process by plasma polymerization of boron trichloride BCl 3 and chlorine Cl 2 used as the second process. COPYRIGHT: (C)2006,JPO&NCIPI

Cleaning method of etching device

PROBLEM TO BE SOLVED: To provide an etching method that sufficiently protects side-wall etching from non-straight-advance scattering ions, and at the same time prevents narrowing in dimensions at a groove or a hole bottom section in the etching of a photo resist resin or carbon-family resin such as a Low-k material (a low-permittivity insulating film with carbon such as SILK and FLARE and Si as main constituents). SOLUTION: Etching treatment is made by the plasma of the mixed gas of oxygen and a BCl3 gas. Or, the etching is divided into first and second steps. In the first step, etching is carried out by gas plasma that contains only oxygen and does not contain BCl3. In the second step, etching is made by the plasma of the mixed gas that contains oxygen and BCl3.

Kotaro Fujimoto

Papers

Method of cleaning etching apparatus

Sample treating method and apparatus

Method and apparatus for treatment of specimen

Cleaning method of etching device

Method of etching sample