An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Process feed management for semiconductor substrate processing

Nano- and microsize effect of CCTO fillers on the dielectric behavior of CCTO/PVDF composites

A method of forming an insulation film by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using reactant gas and a plasma, wherein a plasma is applied in the process of supplying the precursor.

Method of forming insulation film by modified PEALD

To provide a cleaning method for an etching apparatus for a metal film that efficiently removes an etching residue deposited in an etching process chamber, assures the reproducibility of the etching performance, and keeps the etching process chamber in a low-dust-emission condition. Each time one workpiece with a metal film is etched (S 1 ), the interior of the vacuum chamber is cleaned by replacing the workpiece with a dummy substrate (S 2 ), performing a first step of plasma processing using oxygen (O 2 ) and carbon tetrafluoride (CF 4 ) to remove a carbon-based deposit pile (S 3 ), and performing a second step of plasma processing using boron trichloride (BCl 3 ) and chlorine (Cl 2 ) to remove a residue that could not be removed by the first step and an etching residue of the metal film (S 4 ).

Method of cleaning etching apparatus

Here we report the influence of the grain size of the Ba(Mg 1/3 ,Ta 2/3 )O 3 (BMT) and secondary phase formed in Ba([Mg 0.8 Zn 0.2 ] 1/3 ,Ta 2/3 )O 3 (BMZT) ceramics on the microwave dielectric properties. BMT and BMZT ceramics were prepared by conventional mixed-oxide reaction method using high purity reagents. Samples with different grain size and secondary phase content were obtained by controlling the sintering time of the BMT and BMZT. The secondary phase comprised of BaTa 2 O 6 , which includes small amount of Zn, was formed due to the vaporization of ZnO from BMZT by the high temperature sintering. The Qf value of BMT increased up to 400 THz with increasing the grain size of ceramics, whereas the Qf value of BMZT decreased with increase of the BaTa 2 O 6 content. This second phase also caused an increase in the temperature coefficient of the resonant frequency of BMZT.

Effect of grain size and secondary phase on microwave dielectric properties of Ba(Mg1/3Ta2/3)O3 and Ba([Mg,Zn]1/3Ta2/3)O3 systems

Lead free positive temperature coefficient of resistivity (PTCR) ceramics based on BaTiO3–(Bi1/2Na1/2)TiO3 (BT–BNT) solid solution were prepared by a conventional solid state reaction method using high purity reagents. Temperature dependence of the electrical resistivity was measured and a typical PTCR effect was confirmed in the solid solutions up to 30 mol% addition of BNT. Especially 8.8 mol% BNT added sample indicated superior PTCR properties by optimizing the preparation conditions. Thermal electrical properties and crystal structure were investigated in order to elucidate the origin of the PTCR effect in this system. The DSC spectra of this system indicated the transition to cubic from tetragonal crystal structure and the transition temperature increased with BNT addition up to about 175 °C. Also the boundary layer on the grains was observed by Scanning Spreading Resistance Microscope (SSRM) technique. And then the broad signal of electron emission concerning the interface states was observed using Isothermal Capacitance Transient Spectroscopy (ICTS) technique. In our study, it was found that the PTCR ceramics in BT–BNT system has extremely similar properties to the conventional lead contained one.

Lead free PTCR ceramics and its electrical properties

A BaTiO3 based semiconductor ceramic composition wherein without using Pb, the Curie temperature thereof can be shifted in the positive direction and further the resistivity thereof at room temperature thereof is markedly lowered. In this composition, a part of Ba is replaced with element A1 (at least one of Na, K, Li) and element A2 (Bi), and further Ba is replaced with a specified amount of element Q. Alternatively, a part of Ba is replaced with element A1 (at least one of Na, K, Li) and element A2 (Bi), and further a part of Ti is replaced with a specified amount of element M. Consequently, this composition realizes optimum atomic valence control and enables substantial drop of resistivity at room temperature, thereby being most suitable for use in a PTC thermistor, a PTC heater, a PTC switch, a temperature detector, etc., in particular, a heater for automobile or the like.

Semiconductor ceramic composition

Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time

Takeshi Shimada

Papers

Method of cleaning etching apparatus

Effect of grain size and secondary phase on microwave dielectric properties of Ba(Mg1/3Ta2/3)O3 and Ba([Mg,Zn]1/3Ta2/3)O3 systems

Lead free PTCR ceramics and its electrical properties

Semiconductor ceramic composition

Plasma processing method and apparatus