Patent
Method of cleaning etching apparatus
TLDR
In this article, a cleaning method for an etching apparatus for a metal film that efficiently removes a residue deposited in an etch process chamber, assures the reproducibility of the etching performance, and keeps the etaching process chamber in a low-dust-emission condition is presented.Abstract:
To provide a cleaning method for an etching apparatus for a metal film that efficiently removes an etching residue deposited in an etching process chamber, assures the reproducibility of the etching performance, and keeps the etching process chamber in a low-dust-emission condition. Each time one workpiece with a metal film is etched (S 1 ), the interior of the vacuum chamber is cleaned by replacing the workpiece with a dummy substrate (S 2 ), performing a first step of plasma processing using oxygen (O 2 ) and carbon tetrafluoride (CF 4 ) to remove a carbon-based deposit pile (S 3 ), and performing a second step of plasma processing using boron trichloride (BCl 3 ) and chlorine (Cl 2 ) to remove a residue that could not be removed by the first step and an etching residue of the metal film (S 4 ).read more
Citations
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Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
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References
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Patent
Method for cleaning a plasma chamber
TL;DR: In this paper, a substrate having a metal layer thereon is placed in a plasma chamber and the metal layer is etched and then the substrate is removed from the plasma chamber to perform a dry cleaning.
Patent
Two-step process for cleaning a substrate processing chamber
TL;DR: In this article, a method and apparatus for removing particles from an interior surface of a processing chamber using a two-step cleaning process is described. But the method is not suitable for the extraction of wafers.
Patent
Method for cleaning vacuum processing apparatus
TL;DR: In this article, an aluminum film formed on a semiconductor substrate and covered by resist pattern is etched by a gas containing chlorine radicals in a processing chamber of the vacuum processing apparatus and after that, a plasma of diluted gases of mixture gases consisting of a gas including oxygen radicals, a gas consisting of fluorine radicals, and a gas contained chlorine radicals is generated in the processing chamber, thereby removing residual reaction products.
Patent
Method of cleaning vacuum processing apparatus
TL;DR: In this article, an aluminum film formed on a semiconductor substrate and covered by resist pattern is etched by a gas containing chlorine radicals in a processing chamber of the vacuum processing apparatus and after that, a plasma of diluted gases of mixture gases consisting of a gas including oxygen radicals, a gas consisting of fluorine radicals, and a gas contained chlorine radicals is generated in the processing chamber, thereby removing residual reaction products.
Patent
Cleaning of multicompositional etchant residues
TL;DR: In this article, a substrate processing apparatus has a chamber with a substrate transport to transport a substrate onto a substrate support in the chamber, a gas supply to provide a gas, and a gas exhaust to exhaust the gas.