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Kyungjin Kim

Researcher at Georgia Institute of Technology

Publications -  14
Citations -  131

Kyungjin Kim is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Silicon nitride & Computer science. The author has an hindex of 5, co-authored 11 publications receiving 109 citations. Previous affiliations of Kyungjin Kim include KAIST.

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Nondispersive optical activity of meshed helical metamaterials.

TL;DR: It is demonstrated that strong, flat broadband optical activity with high transparency can be obtained with meshed helical metamaterials in which metallic helical structures are networked and arranged to have fourfold rotational symmetry around the propagation axis.
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Environmentally Assisted Cracking in Silicon Nitride Barrier Films on Poly(ethylene terephthalate) Substrates

TL;DR: The results reveal the occurrence of environmentally assisted crack growth at strains well below the critical onset crack strain and in the absence of polymer-relaxation-assisted, time-dependent crack growth, suggesting an easier initiation of channel cracks in the presence of water vapor.
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Influence of Polymer Substrate Damage on the Time Dependent Cracking of SiNx Barrier Films.

TL;DR: The present experiments over longer periods reveal a regime where cracking also develops in the polymer substrate, and a guideline to effectively improving the long-term reliability of flexible barriers by a substrate possessing high strength which limits substrate damage.
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Note: A single specimen channel crack growth technique applied to brittle thin films on polymer substrates

TL;DR: An external-load-assisted thin film channel crack growth technique is introduced to measure the subcritical crack growth properties of thin films to provide a full v-G curve with a single specimen while relying on a simple specimen preparation and straightforward crack growth characterization.
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Optimizing Crack Onset Strain for Silicon Nitride/Fluoropolymer Nanolaminate Barrier Films

TL;DR: Nanolaminates using alternating inorganic and organic layers have the potential to provide ultrabarrier with high resistance to gas permeation while also changing the crack onset strain (COS) to im...